Synthesis and Characterization of Nitrogen-Doped ZnO Films Grown by MOCVD

Timothy J. Coutts, Xiaonan Li, Teresa M. Barnes, Brian M. Keyes, Craig L. Perkins, Sally E. Asher, S. B. Zhang, Su Huai Wei, Sukit Limpijumnong

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

3 Scopus Citations


This chapter discusses the work done at the National Renewable Energy Laboratory (NREL), and collaborating institutions, concerned with developing metal-organic chemical-vapor deposition (MOCVD) grown nitrogen-doped p-type zinc oxide (ZnO). To date, the carrier concentrations achieved have been relatively low, but it must be noted that this is similar to the results of other workers using different dopants and growth techniques. By using the fabrication, characterization, and theoretical capabilities available at NREL, the chapter develops a clear understanding of the reasons why films have such low hole concentrations. It appears that films, prepared using MOCVD and reactive sputtering, are inevitably highly compensated due to the inclusion of H, C, and self-compensating N-related donor-like defects. However, it is certainly not inevitable that the concentrations of these defects outnumber the N-related acceptors. In particular, it has been shown by others that heating the films at high temperature after deposition can cause out-diffusion of H.

Original languageAmerican English
Title of host publicationZinc Oxide Bulk, Thin Films and Nanostructures
Subtitle of host publicationProcessing, Properties, and Applications
EditorsC. Jagadish, S. Pearon
Number of pages41
ISBN (Print)9780080447223
StatePublished - 8 Nov 2006

Bibliographical note

Publisher Copyright:
© 2006 Elsevier Ltd.

NREL Publication Number

  • NREL/CH-520-38380


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