Abstract
This chapter discusses the work done at the National Renewable Energy Laboratory (NREL), and collaborating institutions, concerned with developing metal-organic chemical-vapor deposition (MOCVD) grown nitrogen-doped p-type zinc oxide (ZnO). To date, the carrier concentrations achieved have been relatively low, but it must be noted that this is similar to the results of other workers using different dopants and growth techniques. By using the fabrication, characterization, and theoretical capabilities available at NREL, the chapter develops a clear understanding of the reasons why films have such low hole concentrations. It appears that films, prepared using MOCVD and reactive sputtering, are inevitably highly compensated due to the inclusion of H, C, and self-compensating N-related donor-like defects. However, it is certainly not inevitable that the concentrations of these defects outnumber the N-related acceptors. In particular, it has been shown by others that heating the films at high temperature after deposition can cause out-diffusion of H.
Original language | American English |
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Title of host publication | Zinc Oxide Bulk, Thin Films and Nanostructures |
Subtitle of host publication | Processing, Properties, and Applications |
Editors | C. Jagadish, S. Pearon |
Publisher | Elsevier |
Pages | 43-83 |
Number of pages | 41 |
ISBN (Print) | 9780080447223 |
DOIs | |
State | Published - 8 Nov 2006 |
Bibliographical note
Publisher Copyright:© 2006 Elsevier Ltd.
NREL Publication Number
- NREL/CH-520-38380