Synthesis and Characterization of Nitrogen Doped ZnO (ZnO:N) Films for Solar Driven Hydrogen Production by Photoelectrochemical Water Splitting

Sudhakar Shet; Yanfa Yan; Todd Deutsch; Ravindra Nuggehalli; John Turner; Mowafak Al-Jassim

Synthesis and Characterization of Nitrogen Doped ZnO (ZnO:N) Films for Solar Driven Hydrogen Production by Photoelectrochemical Water Splitting

Sudhakar Shet, Yanfa Yan, Todd Deutsch, Ravindra Nuggehalli, John Turner, Mowafak Al-Jassim

Research output: Contribution to conference › Paper › peer-review

Abstract

ZnO:N thin films with reduced bandgaps were synthesized by doping N in ZnO at 100°C followed by postdeposition annealing at 500°C in air for 2 h. All the films were synthesized by rf magnetron sputtering on F-doped tin oxide-coated glass. It is found that N doped ZnO :N thin films exhibited significantly enhanced crystallinity compared to ZnO at the same growth conditions. Furthermore, ZnO:N thin films showed enhanced N incorporation and shift the optical absorption into the visible light regions. As a result, ZnO:N films showed improved PEC response, compared to ZnO thin films.

Original language	American English
Pages	259-267
Number of pages	9
State	Published - 2010
Event	Materials Science and Technology Conference and Exhibition 2010, MS and T'10 - Houston, TX, United States Duration: 17 Oct 2010 → 21 Oct 2010

Conference

Conference	Materials Science and Technology Conference and Exhibition 2010, MS and T'10
Country/Territory	United States
City	Houston, TX
Period	17/10/10 → 21/10/10

NREL Publication Number

NREL/CP-5200-51622

Keywords

Band gap
Crystallinity
Doping
Gas ambient
N concentration
Photoelectrochemical
RF power
Sputter
Substrate temperature
ZnO

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@conference{bb6e2747a04c478e86351115ee1331dc,

title = "Synthesis and Characterization of Nitrogen Doped ZnO (ZnO:N) Films for Solar Driven Hydrogen Production by Photoelectrochemical Water Splitting",

abstract = "ZnO:N thin films with reduced bandgaps were synthesized by doping N in ZnO at 100°C followed by postdeposition annealing at 500°C in air for 2 h. All the films were synthesized by rf magnetron sputtering on F-doped tin oxide-coated glass. It is found that N doped ZnO :N thin films exhibited significantly enhanced crystallinity compared to ZnO at the same growth conditions. Furthermore, ZnO:N thin films showed enhanced N incorporation and shift the optical absorption into the visible light regions. As a result, ZnO:N films showed improved PEC response, compared to ZnO thin films.",

keywords = "Band gap, Crystallinity, Doping, Gas ambient, N concentration, Photoelectrochemical, RF power, Sputter, Substrate temperature, ZnO",

author = "Sudhakar Shet and Yanfa Yan and Todd Deutsch and Ravindra Nuggehalli and John Turner and Mowafak Al-Jassim",

year = "2010",

language = "American English",

pages = "259--267",

note = "Materials Science and Technology Conference and Exhibition 2010, MS and T'10 ; Conference date: 17-10-2010 Through 21-10-2010",

}

Shet, S, Yan, Y, Deutsch, T, Nuggehalli, R, Turner, J & Al-Jassim, M 2010, 'Synthesis and Characterization of Nitrogen Doped ZnO (ZnO:N) Films for Solar Driven Hydrogen Production by Photoelectrochemical Water Splitting', Paper presented at Materials Science and Technology Conference and Exhibition 2010, MS and T'10, Houston, TX, United States, 17/10/10 - 21/10/10 pp. 259-267.

Synthesis and Characterization of Nitrogen Doped ZnO (ZnO:N) Films for Solar Driven Hydrogen Production by Photoelectrochemical Water Splitting. / Shet, Sudhakar; Yan, Yanfa; Deutsch, Todd et al.
2010. 259-267 Paper presented at Materials Science and Technology Conference and Exhibition 2010, MS and T'10, Houston, TX, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Synthesis and Characterization of Nitrogen Doped ZnO (ZnO:N) Films for Solar Driven Hydrogen Production by Photoelectrochemical Water Splitting

AU - Shet, Sudhakar

AU - Yan, Yanfa

AU - Deutsch, Todd

AU - Nuggehalli, Ravindra

AU - Turner, John

AU - Al-Jassim, Mowafak

PY - 2010

Y1 - 2010

N2 - ZnO:N thin films with reduced bandgaps were synthesized by doping N in ZnO at 100°C followed by postdeposition annealing at 500°C in air for 2 h. All the films were synthesized by rf magnetron sputtering on F-doped tin oxide-coated glass. It is found that N doped ZnO :N thin films exhibited significantly enhanced crystallinity compared to ZnO at the same growth conditions. Furthermore, ZnO:N thin films showed enhanced N incorporation and shift the optical absorption into the visible light regions. As a result, ZnO:N films showed improved PEC response, compared to ZnO thin films.

AB - ZnO:N thin films with reduced bandgaps were synthesized by doping N in ZnO at 100°C followed by postdeposition annealing at 500°C in air for 2 h. All the films were synthesized by rf magnetron sputtering on F-doped tin oxide-coated glass. It is found that N doped ZnO :N thin films exhibited significantly enhanced crystallinity compared to ZnO at the same growth conditions. Furthermore, ZnO:N thin films showed enhanced N incorporation and shift the optical absorption into the visible light regions. As a result, ZnO:N films showed improved PEC response, compared to ZnO thin films.

KW - Band gap

KW - Crystallinity

KW - Doping

KW - Gas ambient

KW - N concentration

KW - Photoelectrochemical

KW - RF power

KW - Sputter

KW - Substrate temperature

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=79952663537&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79952663537

SP - 259

EP - 267

T2 - Materials Science and Technology Conference and Exhibition 2010, MS and T'10

Y2 - 17 October 2010 through 21 October 2010

ER -

Synthesis and Characterization of Nitrogen Doped ZnO (ZnO:N) Films for Solar Driven Hydrogen Production by Photoelectrochemical Water Splitting

Abstract

Conference

NREL Publication Number

Keywords

UN SDGs

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