Synthesis of Band-Gap-Reduced p-Type ZnO Films by Cu Incorporation

Kwang Soon Ahn; Todd Deutsch; Yanfa Yan; Chun Sheng Jiang; Craig L. Perkins; John Turner; Mowafak Al-Jassim

doi:10.1063/1.2756517

Synthesis of Band-Gap-Reduced p-Type ZnO Films by Cu Incorporation

Kwang Soon Ahn, Todd Deutsch, Yanfa Yan, Chun Sheng Jiang, Craig L. Perkins, John Turner, Mowafak Al-Jassim

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

137 Scopus Citations

Abstract

p -type ZnO thin films with significantly reduced band gaps were synthesized by heavy Cu incorporation at room temperature and followed by postdeposition annealing at 500 °C in air for 2 h. All the films were synthesized by rf magnetron sputtering on F-doped tin oxide-coated glass. The p -type conductivity was confirmed by Mott-Schottky plots and illuminated I-V analysis. The Cu+1 acceptor states (at substitutional sites) and their band-gap reduction were demonstrated by UV-visible absorption and x-ray excited valence band measurements.

Original language	American English
Article number	023517
Number of pages	6
Journal	Journal of Applied Physics
Volume	102
Issue number	2
DOIs	https://doi.org/10.1063/1.2756517 https://doi.org/10.1063/1.2756517
State	Published - 2007

NREL Publication Number

NREL/JA-520-41322

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title = "Synthesis of Band-Gap-Reduced p-Type ZnO Films by Cu Incorporation",

abstract = "p -type ZnO thin films with significantly reduced band gaps were synthesized by heavy Cu incorporation at room temperature and followed by postdeposition annealing at 500 °C in air for 2 h. All the films were synthesized by rf magnetron sputtering on F-doped tin oxide-coated glass. The p -type conductivity was confirmed by Mott-Schottky plots and illuminated I-V analysis. The Cu+1 acceptor states (at substitutional sites) and their band-gap reduction were demonstrated by UV-visible absorption and x-ray excited valence band measurements.",

author = "Ahn, {Kwang Soon} and Todd Deutsch and Yanfa Yan and Jiang, {Chun Sheng} and Perkins, {Craig L.} and John Turner and Mowafak Al-Jassim",

year = "2007",

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language = "American English",

volume = "102",

journal = "Journal of Applied Physics",

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AU - Yan, Yanfa

AU - Jiang, Chun Sheng

AU - Perkins, Craig L.

AU - Turner, John

AU - Al-Jassim, Mowafak

PY - 2007

Y1 - 2007

N2 - p -type ZnO thin films with significantly reduced band gaps were synthesized by heavy Cu incorporation at room temperature and followed by postdeposition annealing at 500 °C in air for 2 h. All the films were synthesized by rf magnetron sputtering on F-doped tin oxide-coated glass. The p -type conductivity was confirmed by Mott-Schottky plots and illuminated I-V analysis. The Cu+1 acceptor states (at substitutional sites) and their band-gap reduction were demonstrated by UV-visible absorption and x-ray excited valence band measurements.

AB - p -type ZnO thin films with significantly reduced band gaps were synthesized by heavy Cu incorporation at room temperature and followed by postdeposition annealing at 500 °C in air for 2 h. All the films were synthesized by rf magnetron sputtering on F-doped tin oxide-coated glass. The p -type conductivity was confirmed by Mott-Schottky plots and illuminated I-V analysis. The Cu+1 acceptor states (at substitutional sites) and their band-gap reduction were demonstrated by UV-visible absorption and x-ray excited valence band measurements.

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U2 - 10.1063/1.2756517

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ER -

Synthesis of Band-Gap-Reduced p-Type ZnO Films by Cu Incorporation

Abstract

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