Systematic Approach to Distinguishing a Perturbed Host State from an Impurity State in a Supercell Calculation for a Doped Semiconductor: Using GaP:N as an Example: Article No. 041201(R)

doi:10.1103/PhysRevB.74.041201

Systematic Approach to Distinguishing a Perturbed Host State from an Impurity State in a Supercell Calculation for a Doped Semiconductor: Using GaP:N as an Example: Article No. 041201(R)

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	74
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.74.041201
State	Published - 2006

NREL Publication Number

NREL/JA-590-40737

Access to Document

10.1103/PhysRevB.74.041201

Cite this

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title = "Systematic Approach to Distinguishing a Perturbed Host State from an Impurity State in a Supercell Calculation for a Doped Semiconductor: Using GaP:N as an Example: Article No. 041201(R)",

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year = "2006",

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journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "4",

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