Systematic Inclusion of Defects in Pure Carbon Single-Wall Nanotubes and their Effect on the Raman D-Band

A. C. Dillon, P. A. Parilla, J. L. Alleman, T. Gennett, K. M. Jones, M. J. Heben

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Abstract

The Raman D-band feature (∼1350 cm -1) is examined with 2.54 eV excitation for pure bulk carbon single-wall nanotube samples before and after treatments that increase defect densities. Upon employing mass-transport- limited oxidation to introduce defects, the D-band intensity increases approximately linearly with reaction time. A relatively constant ratio of the D-band intensity and the major tangential G-band intensity (D/G) is observed for the purified samples examined at 2.54 and 1.96 eV suggesting a characteristic number of defects is introduced for given synthesis and purification processes. The D/G ratio is ∼1/190 and 1/40 for excitation at 2.54 and 1.96 eV, respectively.

Original languageAmerican English
Pages (from-to)522-528
Number of pages7
JournalChemical Physics Letters
Volume401
Issue number4-6
DOIs
StatePublished - 2005

NREL Publication Number

  • NREL/JA-590-37872

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