Systematic Inclusion of Defects in Pure Carbon Single-Wall Nanotubes and their Effect on the Raman D-Band

A. C. Dillon; P. A. Parilla; J. L. Alleman; T. Gennett; K. M. Jones; M. J. Heben

doi:10.1016/j.cplett.2004.11.104

Systematic Inclusion of Defects in Pure Carbon Single-Wall Nanotubes and their Effect on the Raman D-Band

A. C. Dillon
, P. A. Parilla
, J. L. Alleman
, T. Gennett
, K. M. Jones
, M. J. Heben

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

92 Scopus Citations

Abstract

The Raman D-band feature (∼1350 cm ^-1) is examined with 2.54 eV excitation for pure bulk carbon single-wall nanotube samples before and after treatments that increase defect densities. Upon employing mass-transport- limited oxidation to introduce defects, the D-band intensity increases approximately linearly with reaction time. A relatively constant ratio of the D-band intensity and the major tangential G-band intensity (D/G) is observed for the purified samples examined at 2.54 and 1.96 eV suggesting a characteristic number of defects is introduced for given synthesis and purification processes. The D/G ratio is ∼1/190 and 1/40 for excitation at 2.54 and 1.96 eV, respectively.

Original language	American English
Pages (from-to)	522-528
Number of pages	7
Journal	Chemical Physics Letters
Volume	401
Issue number	4-6
DOIs	https://doi.org/10.1016/j.cplett.2004.11.104 https://doi.org/10.1016/j.cplett.2004.11.104
State	Published - 2005

NLR Publication Number

NREL/JA-590-37872

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@article{236f9866f8624469accd2bebd3cda0c0,

title = "Systematic Inclusion of Defects in Pure Carbon Single-Wall Nanotubes and their Effect on the Raman D-Band",

abstract = "The Raman D-band feature (∼1350 cm -1) is examined with 2.54 eV excitation for pure bulk carbon single-wall nanotube samples before and after treatments that increase defect densities. Upon employing mass-transport- limited oxidation to introduce defects, the D-band intensity increases approximately linearly with reaction time. A relatively constant ratio of the D-band intensity and the major tangential G-band intensity (D/G) is observed for the purified samples examined at 2.54 and 1.96 eV suggesting a characteristic number of defects is introduced for given synthesis and purification processes. The D/G ratio is ∼1/190 and 1/40 for excitation at 2.54 and 1.96 eV, respectively.",

author = "Dillon, \{A. C.\} and Parilla, \{P. A.\} and Alleman, \{J. L.\} and T. Gennett and Jones, \{K. M.\} and Heben, \{M. J.\}",

year = "2005",

doi = "10.1016/j.cplett.2004.11.104",

language = "American English",

volume = "401",

pages = "522--528",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier B.V.",

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}

TY - JOUR

T1 - Systematic Inclusion of Defects in Pure Carbon Single-Wall Nanotubes and their Effect on the Raman D-Band

AU - Dillon, A. C.

AU - Parilla, P. A.

AU - Alleman, J. L.

AU - Gennett, T.

AU - Jones, K. M.

AU - Heben, M. J.

PY - 2005

Y1 - 2005

N2 - The Raman D-band feature (∼1350 cm -1) is examined with 2.54 eV excitation for pure bulk carbon single-wall nanotube samples before and after treatments that increase defect densities. Upon employing mass-transport- limited oxidation to introduce defects, the D-band intensity increases approximately linearly with reaction time. A relatively constant ratio of the D-band intensity and the major tangential G-band intensity (D/G) is observed for the purified samples examined at 2.54 and 1.96 eV suggesting a characteristic number of defects is introduced for given synthesis and purification processes. The D/G ratio is ∼1/190 and 1/40 for excitation at 2.54 and 1.96 eV, respectively.

AB - The Raman D-band feature (∼1350 cm -1) is examined with 2.54 eV excitation for pure bulk carbon single-wall nanotube samples before and after treatments that increase defect densities. Upon employing mass-transport- limited oxidation to introduce defects, the D-band intensity increases approximately linearly with reaction time. A relatively constant ratio of the D-band intensity and the major tangential G-band intensity (D/G) is observed for the purified samples examined at 2.54 and 1.96 eV suggesting a characteristic number of defects is introduced for given synthesis and purification processes. The D/G ratio is ∼1/190 and 1/40 for excitation at 2.54 and 1.96 eV, respectively.

UR - https://www.scopus.com/pages/publications/11144288191

U2 - 10.1016/j.cplett.2004.11.104

DO - 10.1016/j.cplett.2004.11.104

M3 - Article

AN - SCOPUS:11144288191

SN - 0009-2614

VL - 401

SP - 522

EP - 528

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 4-6

ER -

Systematic Inclusion of Defects in Pure Carbon Single-Wall Nanotubes and their Effect on the Raman D-Band

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