Abstract
Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.
| Original language | American English |
|---|---|
| Patent number | 9,590,131 |
| Filing date | 7/03/17 |
| State | Published - 2017 |
NREL Publication Number
- NREL/PT-5K00-69094
Keywords
- photovoltaic devices
- solar cells
