Abstract
Systems and methods for advanced ultra-high-performance InP solar cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.
| Original language | American English |
|---|---|
| Patent number | 10,026,856 B2 |
| Filing date | 17/07/18 |
| State | Published - 2018 |
NREL Publication Number
- NREL/PT-5K00-72177
Keywords
- confinement layer
- InP solar cells
- photovoltaic device
