Systems and Methods for Advanced Ultra-High Performance InP Solar Cells

Mark Wanlass

Systems and Methods for Advanced Ultra-High Performance InP Solar Cells

Mark Wanlass (Inventor)

Materials Science

National Renewable Energy Laboratory

Research output: Patent

Abstract

Systems and methods for advanced ultra-high-performance InP solar cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.

Original language	American English
Patent number	10,026,856 B2
Filing date	17/07/18
State	Published - 2018

NLR Publication Number

NREL/PT-5K00-72177

Keywords

confinement layer
InP solar cells
photovoltaic device

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@misc{e2b0354dd81e4770aaf653bd3f7b48f9,

title = "Systems and Methods for Advanced Ultra-High Performance InP Solar Cells",

abstract = "Systems and methods for advanced ultra-high-performance InP solar cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.",

keywords = "confinement layer, InP solar cells, photovoltaic device",

author = "Mark Wanlass",

year = "2018",

language = "American English",

publisher = "National Renewable Energy Laboratory (NREL)",

address = "United States",

type = "Patent",

note = "10,026,856 B2",

}

TY - PAT

T1 - Systems and Methods for Advanced Ultra-High Performance InP Solar Cells

AU - Wanlass, Mark

PY - 2018

Y1 - 2018

N2 - Systems and methods for advanced ultra-high-performance InP solar cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.

AB - Systems and methods for advanced ultra-high-performance InP solar cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.

KW - confinement layer

KW - InP solar cells

KW - photovoltaic device

M3 - Patent

M1 - 10,026,856 B2

Y2 - 2018/07/17

PB - National Renewable Energy Laboratory (NREL)

ER -

Systems and Methods for Advanced Ultra-High Performance InP Solar Cells

Abstract

NLR Publication Number

Keywords

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