Tabula Rasa: Oxygen Precipitate Dissolution though Rapid High Temperature Processing in Silicon

Vincenzo LaSalvia; Pauls Stradins; Erin Looney; Hannu Laine; Mallory Jensen; Amanda Youssef; Tonio Buonassisi

doi:10.1109/PVSC.2017.8366688

Tabula Rasa: Oxygen Precipitate Dissolution though Rapid High Temperature Processing in Silicon

Vincenzo LaSalvia, Pauls Stradins, Erin Looney, Hannu Laine, Mallory Jensen, Amanda Youssef, Tonio Buonassisi

Chemistry and Nanoscience

Massachusetts Institute of Technology

Research output: Contribution to conference › Paper

Abstract

Over one fourth of all monocrystalline silicon ingots suffer from a 20% performance degradation due to oxygen precipitates. Tabula Rasa (TR) is a mitigation technique that dissolves these precipitates, making them harmless. This work explores the dependence of oxygen dissolution on annealing time and temperature for the TR process to aid in solar cell process optimization. The dissolution time for oxygen precipitates was found to be more than 10 minutes for total dissolution, longer than normal TR process times in the electronics industry. The activation energy, extracted from the precipitate dissolution curves, is found to be 2.6+/-0.5 eV. This value when compared to the migration enthalpy of oxygen in silicon can be used to reveal the energy limiting proces in TR.

Original language	American English
Pages	1491-1493
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2017.8366688
State	Published - 2018
Event	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C. Duration: 25 Jun 2017 → 30 Jun 2017

Conference

Conference	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
City	Washington, D.C.
Period	25/06/17 → 30/06/17

NREL Publication Number

NREL/CP-5900-73961

Keywords

monocrystalline silicon
oxygen related defects
precipitate dissolution
Tabula Rasa
thin wafering

Access to Document

10.1109/PVSC.2017.8366688

Cite this

@conference{81657232f3f64d3e958e95dd77a25291,

title = "Tabula Rasa: Oxygen Precipitate Dissolution though Rapid High Temperature Processing in Silicon",

abstract = "Over one fourth of all monocrystalline silicon ingots suffer from a 20% performance degradation due to oxygen precipitates. Tabula Rasa (TR) is a mitigation technique that dissolves these precipitates, making them harmless. This work explores the dependence of oxygen dissolution on annealing time and temperature for the TR process to aid in solar cell process optimization. The dissolution time for oxygen precipitates was found to be more than 10 minutes for total dissolution, longer than normal TR process times in the electronics industry. The activation energy, extracted from the precipitate dissolution curves, is found to be 2.6+/-0.5 eV. This value when compared to the migration enthalpy of oxygen in silicon can be used to reveal the energy limiting proces in TR.",

keywords = "monocrystalline silicon, oxygen related defects, precipitate dissolution, Tabula Rasa, thin wafering",

author = "Vincenzo LaSalvia and Pauls Stradins and Erin Looney and Hannu Laine and Mallory Jensen and Amanda Youssef and Tonio Buonassisi",

year = "2018",

doi = "10.1109/PVSC.2017.8366688",

language = "American English",

pages = "1491--1493",

note = "2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) ; Conference date: 25-06-2017 Through 30-06-2017",

}

TY - CONF

T1 - Tabula Rasa: Oxygen Precipitate Dissolution though Rapid High Temperature Processing in Silicon

AU - LaSalvia, Vincenzo

AU - Stradins, Pauls

AU - Looney, Erin

AU - Laine, Hannu

AU - Jensen, Mallory

AU - Youssef, Amanda

AU - Buonassisi, Tonio

PY - 2018

Y1 - 2018

N2 - Over one fourth of all monocrystalline silicon ingots suffer from a 20% performance degradation due to oxygen precipitates. Tabula Rasa (TR) is a mitigation technique that dissolves these precipitates, making them harmless. This work explores the dependence of oxygen dissolution on annealing time and temperature for the TR process to aid in solar cell process optimization. The dissolution time for oxygen precipitates was found to be more than 10 minutes for total dissolution, longer than normal TR process times in the electronics industry. The activation energy, extracted from the precipitate dissolution curves, is found to be 2.6+/-0.5 eV. This value when compared to the migration enthalpy of oxygen in silicon can be used to reveal the energy limiting proces in TR.

AB - Over one fourth of all monocrystalline silicon ingots suffer from a 20% performance degradation due to oxygen precipitates. Tabula Rasa (TR) is a mitigation technique that dissolves these precipitates, making them harmless. This work explores the dependence of oxygen dissolution on annealing time and temperature for the TR process to aid in solar cell process optimization. The dissolution time for oxygen precipitates was found to be more than 10 minutes for total dissolution, longer than normal TR process times in the electronics industry. The activation energy, extracted from the precipitate dissolution curves, is found to be 2.6+/-0.5 eV. This value when compared to the migration enthalpy of oxygen in silicon can be used to reveal the energy limiting proces in TR.

KW - monocrystalline silicon

KW - oxygen related defects

KW - precipitate dissolution

KW - Tabula Rasa

KW - thin wafering

U2 - 10.1109/PVSC.2017.8366688

DO - 10.1109/PVSC.2017.8366688

M3 - Paper

SP - 1491

EP - 1493

T2 - 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

Y2 - 25 June 2017 through 30 June 2017

ER -

Tabula Rasa: Oxygen Precipitate Dissolution though Rapid High Temperature Processing in Silicon

Abstract

Conference

NREL Publication Number

Keywords

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