Tailoring Heterovalent Interface Formation with Light

Kwangwook Park, Kirstin Alberi

Research output: Contribution to journalArticlepeer-review

9 Scopus Citations


Integrating different semiconductor materials into an epitaxial device structure offers additional degrees of freedom to select for optimal material properties in each layer. However, interfaces between materials with different valences (i.e. III-V, II-VI and IV semiconductors) can be difficult to form with high quality. Using ZnSe/GaAs as a model system, we explore the use of ultraviolet (UV) illumination during heterovalent interface growth by molecular beam epitaxy as a way to modify the interface properties. We find that UV illumination alters the mixture of chemical bonds at the interface, permitting the formation of Ga-Se bonds that help to passivate the underlying GaAs layer. Illumination also helps to reduce defects in the ZnSe epilayer. These results suggest that moderate UV illumination during growth may be used as a way to improve the optical properties of both the GaAs and ZnSe layers on either side of the interface.

Original languageAmerican English
Article numberArticle No. 8516
Number of pages12
JournalScientific Reports
Issue number1
StatePublished - 1 Dec 2017

Bibliographical note

Publisher Copyright:
© 2017 The Author(s).

NREL Publication Number

  • NREL/JA-5K00-68795


  • interface properties
  • molecular beam epitaxy
  • UV illumination


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