Tailoring MgZnO/CdSeTe Interfaces for Photovoltaics

Tursun Ablekim, Craig Perkins, Xin Zheng, Carey Reich, Drew Swanson, Eric Colegrove, Joel N. Duenow, David Albin, Sanjini Nanayakkara, Matthew O. Reese, Tushar Shimpi, Walajabad Sampath, Wyatt K. Metzger

Research output: Contribution to journalArticlepeer-review

68 Scopus Citations


MgxZn1-xO (MZO) shows great promise to replace CdS as a buffer layer in CdTe-based solar cells. It is more transparent, and the MZO bandgap and electron density can be tuned, thus providing flexibility in controlling the conduction band offsets and recombination rates between transparent conductive oxide/MZO and MZO/CdSeTe interfaces. Integrating this material into solar cell devices has been frustrated by the common observation of abnormal current-voltage curves. Simulations indicate that this anomalous behavior can be attributed to front interface barrier effects. Experiments demonstrate that this common MZO interface problem can be resolved experimentally by surface preparation, preheat steps, and removing oxygen during absorber deposition and CdCl2 treatment. Oxygen during the cell fabrication process is likely to alter MZO properties and MZO/CdSeTe band alignment. After addressing these interface issues and modest optimization, devices with high short-circuit density of 29 mA/cm2 and efficiency above 16% are demonstrated.

Original languageAmerican English
Article number8643045
Pages (from-to)888-892
Number of pages5
JournalIEEE Journal of Photovoltaics
Issue number3
StatePublished - May 2019

Bibliographical note

Publisher Copyright:
© 2011-2012 IEEE.

NREL Publication Number

  • NREL/JA-5K00-72393


  • Cadmium telluride
  • conduction band offset
  • interface
  • MgxZn1-xO (MZO)
  • thin-film solar cells


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