Abstract
This paper describes the team-based thin-film copper indium diselenide (CIS) research activities. The CIS team was formed in December 1994 in Kona, Hawaii. Originally, the team had two working groups: the 'Junction' and the 'Absorber' groups. Currently, there are four working groups the Present Junction, New Junction, Substrate/Mo Impact, and Transient Effect groups. We have completed extensivedata compilation of CIS-based films and solar cells using various techniques such as Auger, photoluminescence, scanning electron microscopy, secondary-ion mass spectrometry, X-ray photoelectron spectroscopy, X-ray diffraction, capacitance-voltage, light and dark current-voltage, and quantum efficiency. Studies are under way to understand the fundamental mechanisms that demonstrate a total-area,high efficiency of 17.7% in CuInGaSe2 devices using chemical-bath deposition (CBD) CdS. Alternate buffer layers are also being investigated to replace the CBD CdS. The impact of various Mo substrates from the various industrial partners has been investigated, and the results are reported. A study is under way to investigate the transient effects in encapsulated/laminated thin-film CIS-baseddevices.
Original language | American English |
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Pages | 75-82 |
Number of pages | 8 |
State | Published - 1997 |
Event | NREL/SNL Photovoltaics Program Review: 14th Conference - Lakewood, Colorado Duration: 18 Nov 1996 → 22 Nov 1996 |
Conference
Conference | NREL/SNL Photovoltaics Program Review: 14th Conference |
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City | Lakewood, Colorado |
Period | 18/11/96 → 22/11/96 |
NREL Publication Number
- NREL/CP-520-22233