Techniques for Increasing Ga Content in CuIn1-xGaxSe2 Thin Films Prepared by Two-Stage Selenization Process

Techniques for Increasing Ga Content in CuIn1-xGaxSe2 Thin Films Prepared by Two-Stage Selenization Process

Research output: Contribution to conference › Paper

Abstract

A Cu-Ga(66 at. %) alloy target was employed for enhancing the gallium content in CuIn1-xGaxSe2 films prepared by two Se-vapor selenizations of metallic precursors. Combination with a Cu-Ga(22 at. %) sputtering target allowed preparation of CuIn1-xGaxSe2 films with a graded profile. Gallium content Gax near the surface was raised to the range 0.28 - 0.32, while an even higher amount of gallium ofup to 0.40 was obtained in the bulk of the films. Efficiency of solar cells prepared from CuIn1-xGaxSe2 films with moderately enhanced gallium content was 8.5%. Higher gallium proportions seem to be correlated with the formation of Cu-rich phases, surface inhomogeneities, and possibly a highly resisitive phase. This combined with inferior crystallinity deteriorated solar cell efficiency.

Original language	American English
Pages	613-619
Number of pages	7
State	Published - 1997
Event	NREL/SNL Photovoltaics Program Review: 14th Conference - Lakewood, Colorado Duration: 18 Nov 1996 → 22 Nov 1996

Conference

Conference	NREL/SNL Photovoltaics Program Review: 14th Conference
City	Lakewood, Colorado
Period	18/11/96 → 22/11/96

Bibliographical note

Work performed by Florida Solar Energy Center, Cocoa Beach, Florida

NREL Publication Number

NREL/CP-23739

Cite this

@conference{363124af55e74bfbbcc1781e14ab7b6c,

title = "Techniques for Increasing Ga Content in CuIn1-xGaxSe2 Thin Films Prepared by Two-Stage Selenization Process",

abstract = "A Cu-Ga(66 at. %) alloy target was employed for enhancing the gallium content in CuIn1-xGaxSe2 films prepared by two Se-vapor selenizations of metallic precursors. Combination with a Cu-Ga(22 at. %) sputtering target allowed preparation of CuIn1-xGaxSe2 films with a graded profile. Gallium content Gax near the surface was raised to the range 0.28 - 0.32, while an even higher amount of gallium ofup to 0.40 was obtained in the bulk of the films. Efficiency of solar cells prepared from CuIn1-xGaxSe2 films with moderately enhanced gallium content was 8.5%. Higher gallium proportions seem to be correlated with the formation of Cu-rich phases, surface inhomogeneities, and possibly a highly resisitive phase. This combined with inferior crystallinity deteriorated solar cell efficiency.",

author = "NREL",

note = "Work performed by Florida Solar Energy Center, Cocoa Beach, Florida; NREL/SNL Photovoltaics Program Review: 14th Conference ; Conference date: 18-11-1996 Through 22-11-1996",

year = "1997",

language = "American English",

pages = "613--619",

}

TY - CONF

T1 - Techniques for Increasing Ga Content in CuIn1-xGaxSe2 Thin Films Prepared by Two-Stage Selenization Process

AU - NREL, null

N1 - Work performed by Florida Solar Energy Center, Cocoa Beach, Florida

PY - 1997

Y1 - 1997

N2 - A Cu-Ga(66 at. %) alloy target was employed for enhancing the gallium content in CuIn1-xGaxSe2 films prepared by two Se-vapor selenizations of metallic precursors. Combination with a Cu-Ga(22 at. %) sputtering target allowed preparation of CuIn1-xGaxSe2 films with a graded profile. Gallium content Gax near the surface was raised to the range 0.28 - 0.32, while an even higher amount of gallium ofup to 0.40 was obtained in the bulk of the films. Efficiency of solar cells prepared from CuIn1-xGaxSe2 films with moderately enhanced gallium content was 8.5%. Higher gallium proportions seem to be correlated with the formation of Cu-rich phases, surface inhomogeneities, and possibly a highly resisitive phase. This combined with inferior crystallinity deteriorated solar cell efficiency.

AB - A Cu-Ga(66 at. %) alloy target was employed for enhancing the gallium content in CuIn1-xGaxSe2 films prepared by two Se-vapor selenizations of metallic precursors. Combination with a Cu-Ga(22 at. %) sputtering target allowed preparation of CuIn1-xGaxSe2 films with a graded profile. Gallium content Gax near the surface was raised to the range 0.28 - 0.32, while an even higher amount of gallium ofup to 0.40 was obtained in the bulk of the films. Efficiency of solar cells prepared from CuIn1-xGaxSe2 films with moderately enhanced gallium content was 8.5%. Higher gallium proportions seem to be correlated with the formation of Cu-rich phases, surface inhomogeneities, and possibly a highly resisitive phase. This combined with inferior crystallinity deteriorated solar cell efficiency.

M3 - Paper

SP - 613

EP - 619

T2 - NREL/SNL Photovoltaics Program Review: 14th Conference

Y2 - 18 November 1996 through 22 November 1996

ER -

Techniques for Increasing Ga Content in CuIn1-xGaxSe2 Thin Films Prepared by Two-Stage Selenization Process

Abstract

Conference

Bibliographical note

NREL Publication Number

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