Abstract
Two types of GaAs-on-Si structures were studied. The first is ALE-grown GaAs on planar (100) Si substrates and the second is GaAs grown by the two step method on patterned Si. Additionally, ZnSe/ZnCdSe structures were grown on GaAs-coated Si. The structural and luminescent properties of these samples were investigated by transmission electron microscopy and photoluminescence.
Original language | American English |
---|---|
Pages | 626-628 |
Number of pages | 3 |
DOIs | |
State | Published - 1992 |
Event | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: 26 Aug 1992 → 28 Aug 1992 |
Conference
Conference | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 |
---|---|
City | Tsukuba, Jpn |
Period | 26/08/92 → 28/08/92 |
NREL Publication Number
- NREL/CP-412-5009