TEM and PL Characterization of GaAs and ZnSe/ZnCdSe Grown on Si

M. M. Al-Jassim, K. M. Jones, S. P. Ahrenkiel, B. M. Keyes, S. M. Vernon, N. H. Karam, J. Furdyna

Research output: Contribution to conferencePaperpeer-review

Abstract

Two types of GaAs-on-Si structures were studied. The first is ALE-grown GaAs on planar (100) Si substrates and the second is GaAs grown by the two step method on patterned Si. Additionally, ZnSe/ZnCdSe structures were grown on GaAs-coated Si. The structural and luminescent properties of these samples were investigated by transmission electron microscopy and photoluminescence.

Original languageAmerican English
Pages626-628
Number of pages3
DOIs
StatePublished - 1992
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 26 Aug 199228 Aug 1992

Conference

ConferenceExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period26/08/9228/08/92

NREL Publication Number

  • NREL/CP-412-5009

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