TEM and PL Characterization of GaAs and ZnSe/ZnCdSe Grown on Si

M. M. Al-Jassim; K. M. Jones; S. P. Ahrenkiel; B. M. Keyes; S. M. Vernon; N. H. Karam; J. Furdyna

doi:10.7567/ssdm.1992.s-ii-2

TEM and PL Characterization of GaAs and ZnSe/ZnCdSe Grown on Si

M. M. Al-Jassim
, K. M. Jones
, S. P. Ahrenkiel
, B. M. Keyes
, S. M. Vernon
, N. H. Karam
, J. Furdyna

Research output: Contribution to conference › Paper › peer-review

Abstract

Two types of GaAs-on-Si structures were studied. The first is ALE-grown GaAs on planar (100) Si substrates and the second is GaAs grown by the two step method on patterned Si. Additionally, ZnSe/ZnCdSe structures were grown on GaAs-coated Si. The structural and luminescent properties of these samples were investigated by transmission electron microscopy and photoluminescence.

Original language	American English
Pages	626-628
Number of pages	3
DOIs	https://doi.org/10.7567/ssdm.1992.s-ii-2
State	Published - 1992
Event	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: 26 Aug 1992 → 28 Aug 1992

Conference

Conference	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
City	Tsukuba, Jpn
Period	26/08/92 → 28/08/92

NLR Publication Number

NREL/CP-412-5009

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10.7567/ssdm.1992.s-ii-2

Cite this

@conference{a9a45a6bab314750b02b08b9f05e7782,

title = "TEM and PL Characterization of GaAs and ZnSe/ZnCdSe Grown on Si",

abstract = "Two types of GaAs-on-Si structures were studied. The first is ALE-grown GaAs on planar (100) Si substrates and the second is GaAs grown by the two step method on patterned Si. Additionally, ZnSe/ZnCdSe structures were grown on GaAs-coated Si. The structural and luminescent properties of these samples were investigated by transmission electron microscopy and photoluminescence.",

author = "Al-Jassim, \{M. M.\} and Jones, \{K. M.\} and Ahrenkiel, \{S. P.\} and Keyes, \{B. M.\} and Vernon, \{S. M.\} and Karam, \{N. H.\} and J. Furdyna",

year = "1992",

doi = "10.7567/ssdm.1992.s-ii-2",

language = "American English",

pages = "626--628",

note = "Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 ; Conference date: 26-08-1992 Through 28-08-1992",

}

Al-Jassim, MM, Jones, KM, Ahrenkiel, SP, Keyes, BM, Vernon, SM, Karam, NH & Furdyna, J 1992, 'TEM and PL Characterization of GaAs and ZnSe/ZnCdSe Grown on Si', Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, 26/08/92 - 28/08/92 pp. 626-628. https://doi.org/10.7567/ssdm.1992.s-ii-2

TY - CONF

T1 - TEM and PL Characterization of GaAs and ZnSe/ZnCdSe Grown on Si

AU - Al-Jassim, M. M.

AU - Jones, K. M.

AU - Ahrenkiel, S. P.

AU - Keyes, B. M.

AU - Vernon, S. M.

AU - Karam, N. H.

AU - Furdyna, J.

PY - 1992

Y1 - 1992

N2 - Two types of GaAs-on-Si structures were studied. The first is ALE-grown GaAs on planar (100) Si substrates and the second is GaAs grown by the two step method on patterned Si. Additionally, ZnSe/ZnCdSe structures were grown on GaAs-coated Si. The structural and luminescent properties of these samples were investigated by transmission electron microscopy and photoluminescence.

AB - Two types of GaAs-on-Si structures were studied. The first is ALE-grown GaAs on planar (100) Si substrates and the second is GaAs grown by the two step method on patterned Si. Additionally, ZnSe/ZnCdSe structures were grown on GaAs-coated Si. The structural and luminescent properties of these samples were investigated by transmission electron microscopy and photoluminescence.

UR - https://www.scopus.com/pages/publications/0026986539

U2 - 10.7567/ssdm.1992.s-ii-2

DO - 10.7567/ssdm.1992.s-ii-2

M3 - Paper

AN - SCOPUS:0026986539

SP - 626

EP - 628

T2 - Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92

Y2 - 26 August 1992 through 28 August 1992

ER -

TEM and PL Characterization of GaAs and ZnSe/ZnCdSe Grown on Si

Abstract

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