TEM and SEM Studies of MOCVD-Grown GaP on Si

Engineering

• Si Substrate 100%
• Metal Organic Chemical Vapor Deposition 100%
• Growth Parameter 50%
• Structural Defect 50%
• Plan View 50%
• Initial Stage 50%
• Free Layer 50%
• Polycrystalline 50%
• Growth Temperature 50%
• Defect Density 50%
• Epitaxial Film 50%

Material Science

• Metal-Organic Chemical Vapor Deposition 100%
• Scanning Electron Microscopy 100%
• Defect Density 50%
• Density 50%
• Annealing 50%
• Nucleation 50%
• Single Crystal 50%
• Epitaxial Film 50%