TEM Investigation of the Role of a Nano-oxide Layer in Aluminum-Induced Crystallization of a-Si:H

Marwan Albarghouti; Hameed Naseem; Mowafak Al-Jassim

doi:10.1149/1.2197150

TEM Investigation of the Role of a Nano-oxide Layer in Aluminum-Induced Crystallization of a-Si:H

Marwan Albarghouti, Hameed Naseem, Mowafak Al-Jassim

Materials Science

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Abstract

A transmission electron microscopy (TEM) investigation was performed on poly-Si films produced by aluminum-induced crystallization of hydrogenated amorphous silicon (a-Si:H) in the presence of a 2 nm SiO2 layer. The poly-Si films were fabricated on glass substrates. The study showed that introducing a 2 nm SiO2 layer produces poly-Si films of large (1-20 μm) grains. The annealing temperatures and annealing times were kept below 450°C and 20 min, respectively. The grain sizes were verified by TEM imaging. Electron diffraction patterns of the grains revealed that they are of good quality and that the grains have no Al layer beneath them.

Original language	American English
Pages (from-to)	G225-G227
Journal	Electrochemical and Solid-State Letters
Volume	9
Issue number	7
DOIs	https://doi.org/10.1149/1.2197150 https://doi.org/10.1149/1.2197150
State	Published - 2006

NREL Publication Number

NREL/JA-520-40245

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title = "TEM Investigation of the Role of a Nano-oxide Layer in Aluminum-Induced Crystallization of a-Si:H",

abstract = "A transmission electron microscopy (TEM) investigation was performed on poly-Si films produced by aluminum-induced crystallization of hydrogenated amorphous silicon (a-Si:H) in the presence of a 2 nm SiO2 layer. The poly-Si films were fabricated on glass substrates. The study showed that introducing a 2 nm SiO2 layer produces poly-Si films of large (1-20 μm) grains. The annealing temperatures and annealing times were kept below 450°C and 20 min, respectively. The grain sizes were verified by TEM imaging. Electron diffraction patterns of the grains revealed that they are of good quality and that the grains have no Al layer beneath them.",

author = "Marwan Albarghouti and Hameed Naseem and Mowafak Al-Jassim",

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T1 - TEM Investigation of the Role of a Nano-oxide Layer in Aluminum-Induced Crystallization of a-Si:H

AU - Albarghouti, Marwan

AU - Naseem, Hameed

AU - Al-Jassim, Mowafak

PY - 2006

Y1 - 2006

N2 - A transmission electron microscopy (TEM) investigation was performed on poly-Si films produced by aluminum-induced crystallization of hydrogenated amorphous silicon (a-Si:H) in the presence of a 2 nm SiO2 layer. The poly-Si films were fabricated on glass substrates. The study showed that introducing a 2 nm SiO2 layer produces poly-Si films of large (1-20 μm) grains. The annealing temperatures and annealing times were kept below 450°C and 20 min, respectively. The grain sizes were verified by TEM imaging. Electron diffraction patterns of the grains revealed that they are of good quality and that the grains have no Al layer beneath them.

AB - A transmission electron microscopy (TEM) investigation was performed on poly-Si films produced by aluminum-induced crystallization of hydrogenated amorphous silicon (a-Si:H) in the presence of a 2 nm SiO2 layer. The poly-Si films were fabricated on glass substrates. The study showed that introducing a 2 nm SiO2 layer produces poly-Si films of large (1-20 μm) grains. The annealing temperatures and annealing times were kept below 450°C and 20 min, respectively. The grain sizes were verified by TEM imaging. Electron diffraction patterns of the grains revealed that they are of good quality and that the grains have no Al layer beneath them.

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SP - G225-G227

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 7

ER -

TEM Investigation of the Role of a Nano-oxide Layer in Aluminum-Induced Crystallization of a-Si:H

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