Temperature and Excitation Dependence of Recombination in CIGS Thin Films with High Spatial Resolution

Alkali post-deposition treatments significantly improve the performance of CuInGaSe2 (CIGS) devices, but there is still room for improvement. Here, we investigate the effects of potassium fluoride alkali post-deposition treatment on the defect chemistry and recombination at grain boundaries and grain interiors using temperature- and injection-dependent cathodoluminescence (CL) spectrum imaging. We study CIGS thin films grown on alkali-free sapphire substrates to isolate the effects of alkali treatment from alkali metals that can diffuse from standard soda-lime glass substrates. We find that alkali treatment affects the energy and temperature dependence of the luminescence peaks, as well as the defect activation energies. CL spectrum images reveal that the luminescence transitions at grain boundaries have a distinct power dependence after alkali treatment and substantially different defect chemistry. This work shows that temperatureand injection-dependence CL spectrum images can provide unique insight into the defect chemistry and recombination behavior of CIGS thin films.