Temperature- and Intensity-Dependent Photovoltaic Measurements to Identify Dominant Recombination Pathways

Riley Brandt, Niall Mangan, Rachel Kurchin, Timothy Milakovich, Sergiu Levcenco, Eugene Fitzgerald, Thomas Unold, Tonio Buonassisi

    Research output: Contribution to conferencePaper

    2 Scopus Citations


    In novel photovoltaic absorbers, it is often difficult to assess the root causes of low open-circuit voltages, which may be due to bulk recombination or sub-optimal contacts. In the present work, we discuss the role of temperature- and illumination-dependent device electrical measurements in quantifying and distinguishing these performance losses - in particular, for determining bounds on interface recombination velocities, band alignment, and minority carrier lifetime. We assess the accuracy of this approach by direct comparison to photoelectron spectroscopy. Then, we demonstrate how more computationally intensive model parameter fitting approaches can draw more insights from this broad measurement space. We apply this measurement and modeling approach to high-performance III-V and thin-film chalcogenide devices.
    Original languageAmerican English
    Number of pages5
    StatePublished - 2016
    Event2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) - Portland, Oregon
    Duration: 5 Jun 201610 Jun 2016


    Conference2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
    CityPortland, Oregon

    NREL Publication Number

    • NREL/CP-5J00-67921


    • gallium arsenide
    • performance evaluation
    • photonic band gap
    • photovoltaic cells
    • radiative recombination
    • semiconductor device measurement
    • temperature measurement


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