Temperature Dependence of Diffusion Length, Lifetime and Minority Electron Mobility in GaInP

F. J. Schultes; T. Christian; R. Jones-Albertus; E. Pickett; K. Alberi; B. Fluegel; T. Liu; P. Misra; A. Sukiasyan; H. Yuen; N. M. Haegel

doi:10.1063/1.4847635

Temperature Dependence of Diffusion Length, Lifetime and Minority Electron Mobility in GaInP

F. J. Schultes, T. Christian, R. Jones-Albertus, E. Pickett, K. Alberi, B. Fluegel, T. Liu, P. Misra, A. Sukiasyan, H. Yuen, N. M. Haegel

Materials Science

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Abstract

The mobility of electrons in double heterostructures of p-type Ga _0.50In_0.50P has been determined by measuring minority carrier diffusion length and lifetime. The minority electron mobility increases monotonically from 300 K to 5 K, limited primarily by optical phonon and alloy scattering. Comparison to majority electron mobility over the same temperature range in comparably doped samples shows a significant reduction in ionized impurity scattering at lower temperatures, due to differences in interaction of repulsive versus attractive carriers with ionized dopant sites. These results should be useful in modeling and optimization for multi-junction solar cells and other optoelectronic devices.

Original language	American English
Article number	242106
Number of pages	4
Journal	Applied Physics Letters
Volume	103
Issue number	24
DOIs	https://doi.org/10.1063/1.4847635 https://doi.org/10.1063/1.4847635
State	Published - 9 Dec 2013

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NREL/JA-5900-61234

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Schultes, F. J., Christian, T., Jones-Albertus, R., Pickett, E., Alberi, K., Fluegel, B., Liu, T., Misra, P., Sukiasyan, A., Yuen, H., & Haegel, N. M. (2013). Temperature Dependence of Diffusion Length, Lifetime and Minority Electron Mobility in GaInP. Applied Physics Letters, 103(24), Article 242106. https://doi.org/10.1063/1.4847635, https://doi.org/10.1063/1.4847635

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abstract = "The mobility of electrons in double heterostructures of p-type Ga 0.50In0.50P has been determined by measuring minority carrier diffusion length and lifetime. The minority electron mobility increases monotonically from 300 K to 5 K, limited primarily by optical phonon and alloy scattering. Comparison to majority electron mobility over the same temperature range in comparably doped samples shows a significant reduction in ionized impurity scattering at lower temperatures, due to differences in interaction of repulsive versus attractive carriers with ionized dopant sites. These results should be useful in modeling and optimization for multi-junction solar cells and other optoelectronic devices.",

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AU - Schultes, F. J.

AU - Christian, T.

AU - Jones-Albertus, R.

AU - Pickett, E.

AU - Alberi, K.

AU - Fluegel, B.

AU - Liu, T.

AU - Misra, P.

AU - Sukiasyan, A.

AU - Yuen, H.

AU - Haegel, N. M.

PY - 2013/12/9

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AB - The mobility of electrons in double heterostructures of p-type Ga 0.50In0.50P has been determined by measuring minority carrier diffusion length and lifetime. The minority electron mobility increases monotonically from 300 K to 5 K, limited primarily by optical phonon and alloy scattering. Comparison to majority electron mobility over the same temperature range in comparably doped samples shows a significant reduction in ionized impurity scattering at lower temperatures, due to differences in interaction of repulsive versus attractive carriers with ionized dopant sites. These results should be useful in modeling and optimization for multi-junction solar cells and other optoelectronic devices.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Temperature Dependence of Diffusion Length, Lifetime and Minority Electron Mobility in GaInP

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