Temperature Dependence of Equivalent Circuit Parameters Used to Analyze Admittance Spectroscopy and Application to CZTSe Devices

Carolyn Beall, Ingrid Repins, A.E. Caruso, D.S. Pruzan, V. Kosyak, A. Bhatia, E.A. Lund, M.A. Scarpulla

Research output: Contribution to conferencePaperpeer-review

6 Scopus Citations

Abstract

We present a device physics and equivalent circuit model for admittance spectroscopy of CZTSe based photovoltaic devices. The experimental variations of the capacitance and conductance in the depletion width are reproduced for state of the art coevaporated CZTSe devices. We will show that simple Arrhenius analysis of the main capacitance step seen in CZTSe results in erroneous values for the dominant acceptor energy. We will also show that the bulk resistivity in the quasi-neutral region (QNR), even in the presence of the dominant acceptor freezeout, cannot account for the observed increase in series resistance which is responsible for the temperature dependent frequency shift of the capacitance step. Thus, we suggest that dopant freezeout must affect another component of the lumped series resistance such as a non-Ohmic back contact.

Original languageAmerican English
Pages733-736
Number of pages4
DOIs
StatePublished - 15 Oct 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 8 Jun 201413 Jun 2014

Conference

Conference40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States
CityDenver
Period8/06/1413/06/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

  • NREL/CP-5K00-63535

Keywords

  • admittance spectroscopy
  • capacitance methods
  • CZTS
  • CZTSe
  • equivalent circuit

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