Temperature Dependence of Nonradiative Recombination in Low-Band Gap InxGa1-xAs/InAsyP1-y Double Heterostructures Grown on InP Substrates

    Research output: Contribution to journalArticlepeer-review

    Original languageAmerican English
    Pages (from-to)1738-1743
    Number of pages6
    JournalJournal of Applied Physics
    Volume94
    Issue number3
    DOIs
    StatePublished - 2003

    NREL Publication Number

    • NREL/JA-520-34983

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