Temperature Dependent Band-Gap Energy for Cu2ZnSnSe4: A Spectroscopic Ellipsometric Study

S. G. Choi; T. J. Kim; S. Y. Hwang; J. Li; C. Persson; Y. D. Kim; S. H. Wei; I. L. Repins

doi:10.1016/j.solmat.2014.07.039

Temperature Dependent Band-Gap Energy for Cu2ZnSnSe4: A Spectroscopic Ellipsometric Study

S. G. Choi, T. J. Kim, S. Y. Hwang, J. Li, C. Persson, Y. D. Kim, S. H. Wei, I. L. Repins

Materials, Chemical, and Computational Science

Research output: Contribution to journal › Article › peer-review

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Abstract

Spectroscopic ellipsometry (SE) is used to study the dependence of the band-gap energy for Cu₂ZnSnSe₄ (CZTSe) on temperature ranging from 50 to 350 K. A CZTSe thin film prepared by the pseudo-bulk approach allows direct observation of the fundamental band-gap E₀(A,B) in the SE data without need for multi-layer modeling. We obtain accurate energy values for E₀(A,B) and its spin-orbit splitting component E₀(C) from standard lineshape analysis of the second-energy-derivative spectra. The E₀(A,B) and E₀(C) energies for CZTSe decrease with increasing temperature, as for many semiconductors, but their temperature dependencies are relatively weak. Our experimental observation can be explained in terms of relatively small change in bond-length and strong p-d states coupling at the valence band maximum.

Original language	American English
Pages (from-to)	375-379
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	130
DOIs	https://doi.org/10.1016/j.solmat.2014.07.039 https://doi.org/10.1016/j.solmat.2014.07.039
State	Published - Nov 2014

NREL Publication Number

NREL/JA-5J00-61020

Keywords

Band-gap energy
Spectroscopic ellipsometry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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@article{fa207173c4644e42ad55a2975f7ae363,

title = "Temperature Dependent Band-Gap Energy for Cu2ZnSnSe4: A Spectroscopic Ellipsometric Study",

abstract = "Spectroscopic ellipsometry (SE) is used to study the dependence of the band-gap energy for Cu2ZnSnSe4 (CZTSe) on temperature ranging from 50 to 350 K. A CZTSe thin film prepared by the pseudo-bulk approach allows direct observation of the fundamental band-gap E0(A,B) in the SE data without need for multi-layer modeling. We obtain accurate energy values for E0(A,B) and its spin-orbit splitting component E0(C) from standard lineshape analysis of the second-energy-derivative spectra. The E0(A,B) and E0(C) energies for CZTSe decrease with increasing temperature, as for many semiconductors, but their temperature dependencies are relatively weak. Our experimental observation can be explained in terms of relatively small change in bond-length and strong p-d states coupling at the valence band maximum.",

keywords = "Band-gap energy, Spectroscopic ellipsometry",

author = "Choi, {S. G.} and Kim, {T. J.} and Hwang, {S. Y.} and J. Li and C. Persson and Kim, {Y. D.} and Wei, {S. H.} and Repins, {I. L.}",

year = "2014",

month = nov,

doi = "10.1016/j.solmat.2014.07.039",

language = "American English",

volume = "130",

pages = "375--379",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Temperature Dependent Band-Gap Energy for Cu2ZnSnSe4: A Spectroscopic Ellipsometric Study

AU - Choi, S. G.

AU - Kim, T. J.

AU - Hwang, S. Y.

AU - Li, J.

AU - Persson, C.

AU - Kim, Y. D.

AU - Wei, S. H.

AU - Repins, I. L.

PY - 2014/11

Y1 - 2014/11

N2 - Spectroscopic ellipsometry (SE) is used to study the dependence of the band-gap energy for Cu2ZnSnSe4 (CZTSe) on temperature ranging from 50 to 350 K. A CZTSe thin film prepared by the pseudo-bulk approach allows direct observation of the fundamental band-gap E0(A,B) in the SE data without need for multi-layer modeling. We obtain accurate energy values for E0(A,B) and its spin-orbit splitting component E0(C) from standard lineshape analysis of the second-energy-derivative spectra. The E0(A,B) and E0(C) energies for CZTSe decrease with increasing temperature, as for many semiconductors, but their temperature dependencies are relatively weak. Our experimental observation can be explained in terms of relatively small change in bond-length and strong p-d states coupling at the valence band maximum.

AB - Spectroscopic ellipsometry (SE) is used to study the dependence of the band-gap energy for Cu2ZnSnSe4 (CZTSe) on temperature ranging from 50 to 350 K. A CZTSe thin film prepared by the pseudo-bulk approach allows direct observation of the fundamental band-gap E0(A,B) in the SE data without need for multi-layer modeling. We obtain accurate energy values for E0(A,B) and its spin-orbit splitting component E0(C) from standard lineshape analysis of the second-energy-derivative spectra. The E0(A,B) and E0(C) energies for CZTSe decrease with increasing temperature, as for many semiconductors, but their temperature dependencies are relatively weak. Our experimental observation can be explained in terms of relatively small change in bond-length and strong p-d states coupling at the valence band maximum.

KW - Band-gap energy

KW - Spectroscopic ellipsometry

UR - http://www.scopus.com/inward/record.url?scp=84907216891&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2014.07.039

DO - 10.1016/j.solmat.2014.07.039

M3 - Article

AN - SCOPUS:84907216891

SN - 0927-0248

VL - 130

SP - 375

EP - 379

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Temperature Dependent Band-Gap Energy for Cu2ZnSnSe4: A Spectroscopic Ellipsometric Study

Abstract

NREL Publication Number

Keywords

UN SDGs

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