Temperature-Dependent Dark Current Measurements in GaAsN Heterojunction Diodes

J. M. Luther; S. W. Johnston; S. R. Kurtz; R. K. Ahrenkiel; R. T. Collins

doi:10.1063/1.2215604

Temperature-Dependent Dark Current Measurements in GaAsN Heterojunction Diodes

J. M. Luther, S. W. Johnston, S. R. Kurtz, R. K. Ahrenkiel, R. T. Collins

Colorado School of Mines

Research output: Contribution to journal › Article › peer-review

6 Scopus Citations

Abstract

Temperature- and bias-dependent current measurements were performed on n ⁺-GaAs/p-GaAs _1-xN _x heterojunction diodes. The samples studied are in the dilute regime and contain less than 1.7% nitrogen with respect to arsenic. Current-voltage, thermally stimulated current, and current transient (after voltage change) measurements provide unique insight into the defect participation in carrier transport within the depletion region. We will present the data obtained from these measurements, which show an activation energy of 0.21 eV and may be related to a key defect measured by capacitance transients in the literature.

Original language	American English
Article number	263502
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	26
DOIs	https://doi.org/10.1063/1.2215604 https://doi.org/10.1063/1.2215604
State	Published - 2006

NREL Publication Number

NREL/JA-590-39301

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title = "Temperature-Dependent Dark Current Measurements in GaAsN Heterojunction Diodes",

abstract = "Temperature- and bias-dependent current measurements were performed on n +-GaAs/p-GaAs 1-xN x heterojunction diodes. The samples studied are in the dilute regime and contain less than 1.7% nitrogen with respect to arsenic. Current-voltage, thermally stimulated current, and current transient (after voltage change) measurements provide unique insight into the defect participation in carrier transport within the depletion region. We will present the data obtained from these measurements, which show an activation energy of 0.21 eV and may be related to a key defect measured by capacitance transients in the literature.",

author = "Luther, {J. M.} and Johnston, {S. W.} and Kurtz, {S. R.} and Ahrenkiel, {R. K.} and Collins, {R. T.}",

year = "2006",

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journal = "Applied Physics Letters",

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T1 - Temperature-Dependent Dark Current Measurements in GaAsN Heterojunction Diodes

AU - Luther, J. M.

AU - Johnston, S. W.

AU - Kurtz, S. R.

AU - Ahrenkiel, R. K.

AU - Collins, R. T.

PY - 2006

Y1 - 2006

N2 - Temperature- and bias-dependent current measurements were performed on n +-GaAs/p-GaAs 1-xN x heterojunction diodes. The samples studied are in the dilute regime and contain less than 1.7% nitrogen with respect to arsenic. Current-voltage, thermally stimulated current, and current transient (after voltage change) measurements provide unique insight into the defect participation in carrier transport within the depletion region. We will present the data obtained from these measurements, which show an activation energy of 0.21 eV and may be related to a key defect measured by capacitance transients in the literature.

AB - Temperature- and bias-dependent current measurements were performed on n +-GaAs/p-GaAs 1-xN x heterojunction diodes. The samples studied are in the dilute regime and contain less than 1.7% nitrogen with respect to arsenic. Current-voltage, thermally stimulated current, and current transient (after voltage change) measurements provide unique insight into the defect participation in carrier transport within the depletion region. We will present the data obtained from these measurements, which show an activation energy of 0.21 eV and may be related to a key defect measured by capacitance transients in the literature.

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U2 - 10.1063/1.2215604

DO - 10.1063/1.2215604

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VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 263502

ER -

Temperature-Dependent Dark Current Measurements in GaAsN Heterojunction Diodes

Abstract

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