Templated Liquid-Phase Epitaxy of InP Structures on Si: Paper No. PvW1E.5

Olivia Schneble; Anica Neumann; John Mangum; Emily Warren; Jeramy Zimmerman

doi:10.1364/PVLED.2021.PvW1E.5

Templated Liquid-Phase Epitaxy of InP Structures on Si: Paper No. PvW1E.5

Olivia Schneble
, Anica Neumann
, John Mangum
, Emily Warren
, Jeramy Zimmerman

Chemistry and Nanoscience

Research output: Contribution to conference › Paper

Abstract

We demonstrate direct and over-dielectric heteroepitaxial growth of InP on Si substrates through templated liquid-phase epitaxy. Large grains (5 um) are indicated by electron channeling contrast imaging and epitaxy is confirmed by x-ray diffraction.We demonstrate direct and over-dielectric heteroepitaxial growth of InP on Si substrates through templated liquid-phase epitaxy. Large grains (5 um) are indicated by electron channeling contrast imaging and epitaxy is confirmed by x-ray diffraction.

Original language	American English
Number of pages	2
DOIs	https://doi.org/10.1364/PVLED.2021.PvW1E.5
State	Published - 2021
Event	OSA Advanced Photonics Congress 2021 - Washington, D.C. Duration: 26 Jul 2021 → 29 Jul 2021

Conference

Conference	OSA Advanced Photonics Congress 2021
City	Washington, D.C.
Period	26/07/21 → 29/07/21

NLR Publication Number

NREL/CP-5900-79597

Keywords

III-V
optoelectronics
photonics
semiconductor

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10.1364/PVLED.2021.PvW1E.5

Cite this

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title = "Templated Liquid-Phase Epitaxy of InP Structures on Si: Paper No. PvW1E.5",

abstract = "We demonstrate direct and over-dielectric heteroepitaxial growth of InP on Si substrates through templated liquid-phase epitaxy. Large grains (5 um) are indicated by electron channeling contrast imaging and epitaxy is confirmed by x-ray diffraction.We demonstrate direct and over-dielectric heteroepitaxial growth of InP on Si substrates through templated liquid-phase epitaxy. Large grains (5 um) are indicated by electron channeling contrast imaging and epitaxy is confirmed by x-ray diffraction.",

keywords = "III-V, optoelectronics, photonics, semiconductor",

author = "Olivia Schneble and Anica Neumann and John Mangum and Emily Warren and Jeramy Zimmerman",

year = "2021",

doi = "10.1364/PVLED.2021.PvW1E.5",

language = "American English",

note = "OSA Advanced Photonics Congress 2021 ; Conference date: 26-07-2021 Through 29-07-2021",

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TY - CONF

T1 - Templated Liquid-Phase Epitaxy of InP Structures on Si

T2 - OSA Advanced Photonics Congress 2021

AU - Schneble, Olivia

AU - Neumann, Anica

AU - Mangum, John

AU - Warren, Emily

AU - Zimmerman, Jeramy

PY - 2021

Y1 - 2021

N2 - We demonstrate direct and over-dielectric heteroepitaxial growth of InP on Si substrates through templated liquid-phase epitaxy. Large grains (5 um) are indicated by electron channeling contrast imaging and epitaxy is confirmed by x-ray diffraction.We demonstrate direct and over-dielectric heteroepitaxial growth of InP on Si substrates through templated liquid-phase epitaxy. Large grains (5 um) are indicated by electron channeling contrast imaging and epitaxy is confirmed by x-ray diffraction.

AB - We demonstrate direct and over-dielectric heteroepitaxial growth of InP on Si substrates through templated liquid-phase epitaxy. Large grains (5 um) are indicated by electron channeling contrast imaging and epitaxy is confirmed by x-ray diffraction.We demonstrate direct and over-dielectric heteroepitaxial growth of InP on Si substrates through templated liquid-phase epitaxy. Large grains (5 um) are indicated by electron channeling contrast imaging and epitaxy is confirmed by x-ray diffraction.

KW - III-V

KW - optoelectronics

KW - photonics

KW - semiconductor

U2 - 10.1364/PVLED.2021.PvW1E.5

DO - 10.1364/PVLED.2021.PvW1E.5

M3 - Paper

Y2 - 26 July 2021 through 29 July 2021

ER -

Templated Liquid-Phase Epitaxy of InP Structures on Si: Paper No. PvW1E.5

Abstract

Conference

NLR Publication Number

Keywords

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