Templated Vapor-Liquid-Solid Epitaxy of III-V Semiconductors on Silicon

Andrew Norman, Olivia Schneble, Anica Neumann, Theresa Saenz, Jeramy Zimmerman, Emily Warren

Research output: Contribution to conferencePaperpeer-review


Epitaxial growth on silicon remains the most promising method to reduce the cost of optoelectronic-quality III-V semiconductors. Several approaches exist to epitaxially grow III-V material from the vapor phase, but control of 3-D structures remains difficult with these methods. In this work, we present a novel epitaxial growth technique in which photolithography and wet etching are used to establish the geometry of group-III metal, which is then converted to III-V semiconductor by annealing with exposure group-V precursor. The resulting material has been shown to align to the substrate lattice and is optically active, making it a promising approach for III-V PV technologies.

Original languageAmerican English
Number of pages2
StatePublished - 14 Jun 2020
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: 15 Jun 202021 Aug 2020


Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

NREL Publication Number

  • NREL/CP-5K00-79505


  • government
  • III-V semiconductor materials
  • indium phosphide
  • photovoltaic cells
  • renewable energy sources
  • silicon
  • substrates


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