Templated Vapor-Liquid-Solid Epitaxy of III-V Semiconductors on Silicon

Andrew Norman; Olivia Schneble; Anica Neumann; Theresa Saenz; Jeramy Zimmerman; Emily Warren

doi:10.1109/PVSC45281.2020.9300843

Templated Vapor-Liquid-Solid Epitaxy of III-V Semiconductors on Silicon

Andrew Norman, Olivia Schneble, Anica Neumann, Theresa Saenz, Jeramy Zimmerman, Emily Warren

Colorado School of Mines

Research output: Contribution to conference › Paper › peer-review

Abstract

Epitaxial growth on silicon remains the most promising method to reduce the cost of optoelectronic-quality III-V semiconductors. Several approaches exist to epitaxially grow III-V material from the vapor phase, but control of 3-D structures remains difficult with these methods. In this work, we present a novel epitaxial growth technique in which photolithography and wet etching are used to establish the geometry of group-III metal, which is then converted to III-V semiconductor by annealing with exposure group-V precursor. The resulting material has been shown to align to the substrate lattice and is optically active, making it a promising approach for III-V PV technologies.

Original language	American English
Pages	547-548
Number of pages	2
DOIs	https://doi.org/10.1109/PVSC45281.2020.9300843 https://doi.org/10.1109/PVSC45281.2020.9300843
State	Published - 14 Jun 2020
Event	47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: 15 Jun 2020 → 21 Aug 2020

Conference

Conference	47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/Territory	Canada
City	Calgary
Period	15/06/20 → 21/08/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

NREL Publication Number

NREL/CP-5K00-79505

Keywords

government
III-V semiconductor materials
indium phosphide
photovoltaic cells
renewable energy sources
silicon
substrates

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abstract = "Epitaxial growth on silicon remains the most promising method to reduce the cost of optoelectronic-quality III-V semiconductors. Several approaches exist to epitaxially grow III-V material from the vapor phase, but control of 3-D structures remains difficult with these methods. In this work, we present a novel epitaxial growth technique in which photolithography and wet etching are used to establish the geometry of group-III metal, which is then converted to III-V semiconductor by annealing with exposure group-V precursor. The resulting material has been shown to align to the substrate lattice and is optically active, making it a promising approach for III-V PV technologies.",

keywords = "government, III-V semiconductor materials, indium phosphide, photovoltaic cells, renewable energy sources, silicon, substrates",

author = "Andrew Norman and Olivia Schneble and Anica Neumann and Theresa Saenz and Jeramy Zimmerman and Emily Warren",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 ; Conference date: 15-06-2020 Through 21-08-2020",

year = "2020",

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doi = "10.1109/PVSC45281.2020.9300843",

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Norman, A, Schneble, O, Neumann, A , Saenz, T, Zimmerman, J & Warren, E 2020, 'Templated Vapor-Liquid-Solid Epitaxy of III-V Semiconductors on Silicon', Paper presented at 47th IEEE Photovoltaic Specialists Conference, PVSC 2020, Calgary, Canada, 15/06/20 - 21/08/20 pp. 547-548. https://doi.org/10.1109/PVSC45281.2020.9300843, https://doi.org/10.1109/PVSC45281.2020.9300843

TY - CONF

T1 - Templated Vapor-Liquid-Solid Epitaxy of III-V Semiconductors on Silicon

AU - Norman, Andrew

AU - Schneble, Olivia

AU - Neumann, Anica

AU - Saenz, Theresa

AU - Zimmerman, Jeramy

AU - Warren, Emily

PY - 2020/6/14

Y1 - 2020/6/14

N2 - Epitaxial growth on silicon remains the most promising method to reduce the cost of optoelectronic-quality III-V semiconductors. Several approaches exist to epitaxially grow III-V material from the vapor phase, but control of 3-D structures remains difficult with these methods. In this work, we present a novel epitaxial growth technique in which photolithography and wet etching are used to establish the geometry of group-III metal, which is then converted to III-V semiconductor by annealing with exposure group-V precursor. The resulting material has been shown to align to the substrate lattice and is optically active, making it a promising approach for III-V PV technologies.

AB - Epitaxial growth on silicon remains the most promising method to reduce the cost of optoelectronic-quality III-V semiconductors. Several approaches exist to epitaxially grow III-V material from the vapor phase, but control of 3-D structures remains difficult with these methods. In this work, we present a novel epitaxial growth technique in which photolithography and wet etching are used to establish the geometry of group-III metal, which is then converted to III-V semiconductor by annealing with exposure group-V precursor. The resulting material has been shown to align to the substrate lattice and is optically active, making it a promising approach for III-V PV technologies.

KW - government

KW - III-V semiconductor materials

KW - indium phosphide

KW - photovoltaic cells

KW - renewable energy sources

KW - silicon

KW - substrates

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DO - 10.1109/PVSC45281.2020.9300843

M3 - Paper

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SP - 547

EP - 548

T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020

Y2 - 15 June 2020 through 21 August 2020

ER -

Templated Vapor-Liquid-Solid Epitaxy of III-V Semiconductors on Silicon

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

Access to Document

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