Testing and Analysis for Lifetime Prediction of Crystalline Silicon PV Modules Undergoing Degradation by System Voltage Stress

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16 Scopus Citations

Abstract

Acceleration factors are calculated for crystalline silicon PV modules under system voltage stress by comparing the module power during degradation outdoors to that in accelerated testing at three temperatures and 85% relative humidity. A lognormal analysis is applied to the accelerated lifetime test data considering failure at 80% of the initial module power. Activation energy of 0.73 eV for the rate of failure is determined, and the probability of module failure at an arbitrary temperature is predicted. To obtain statistical data for multiple modules over the course of degradation in-situ of the test chamber, dark I-V measurements are obtained and transformed using superposition, which is found well suited for rapid and quantitative evaluation of potential-induced degradation. It is determined that shunt resistance measurements alone do not represent the extent of power degradation. This is explained with a two-diode model analysis that shows an increasing second diode recombination current and ideality factor as the degradation in module power progresses. Failure modes of the modules stressed outdoors are examined and compared to those stressed in accelerated tests.

Original languageAmerican English
Pages1750-1755
Number of pages6
DOIs
StatePublished - 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: 3 Jun 20128 Jun 2012

Conference

Conference38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/TerritoryUnited States
CityAustin, TX
Period3/06/128/06/12

Bibliographical note

See CP-5200-54109 for preprint

NREL Publication Number

  • NREL/CP-5200-56918

Keywords

  • Current-voltage characteristics
  • Degradation
  • High-voltage techniques
  • Photovoltaic cells
  • Photovoltaic systems
  • Reliability

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