Abstract
CdS/CdTe cells deposited on cadmium and zinc stannate (CTO/ZTO) transparent conducting oxide (TCO) substrates show greater degradation than similar devices fabricated on SnO2-based substrates. This has been confirmed in two separate studies in which J-V changes during stress suggest different degradation mechanisms believed to be due to differences in processing. In addition, cells made using the CTO/ZTO substrates exhibit greater variations in initial performance relative to SnO2-based substrates. A capacitance-voltage (CV) method using different initial bias conditions is used to quantify mobile ion concentration. CV hysteresis was observed in Cu-containing cells and was absent in cells that were not intentionally doped with Cu. With increasing stress, hysteresis increased. A faster rate of hysteresis gain was observed in CTO/ZTO cells relative to SnO2 cells. A model is introduced for explaining the origin of the hysteresis and why it increases with increasing stress.
Original language | American English |
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Pages | 1903-1908 |
Number of pages | 6 |
DOIs | |
State | Published - 2009 |
Event | 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: 7 Jun 2009 → 12 Jun 2009 |
Conference
Conference | 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 |
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Country/Territory | United States |
City | Philadelphia, PA |
Period | 7/06/09 → 12/06/09 |
Bibliographical note
For preprint version, see NREL/CP-520-46055NREL Publication Number
- NREL/CP-520-47839
Keywords
- conducting oxide
- hysteresis
- transparent