The Effect of CdTe Deposition Temperature on Device Properties Using Different TCOs and Glass Substrates

Ramesh Dhere, Max Bonnet-Eymard, Emilie Charlet, Emmanuelle Peter, Joel Duenow, Helio Moutinho, Jian V. Li, Marty Scott, Dave Albin, Tim Gessert

Research output: Contribution to conferencePaperpeer-review

1 Scopus Citations

Abstract

In this paper, we present our work on devices fabricated using CdTe films deposited by close-spaced sublimation using substrate temperatures in the range of 450° to 620° C. We studied devices prepared on Saint-Gobain soda lime SGG Diamant and Corning 7059 borosilicate glass substrates. We used four types of contact: SnO2:F, ITO, CTO, and Saint-Gobain AZO with and without high-resistivity buffer layers. We used a variety of buffer layers: undoped SnO2, zinc tin oxide (ZTO), and proprietary Saint-Gobain buffer layers. A buffer layer is crucial for devices using CTO and AZO as the front contact. For AZO layers developed by Saint-Gobain, we achieved 9% efficiency without a buffer layer and over 12% efficiency using buffer layers when CdTe films are deposited below 500° C. We used standard current density-voltage and quantum efficiency analysis to determine the device parameters.

Original languageAmerican English
Pages340-344
Number of pages5
DOIs
StatePublished - 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: 20 Jun 201025 Jun 2010

Conference

Conference35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/TerritoryUnited States
CityHonolulu, HI
Period20/06/1025/06/10

NREL Publication Number

  • NREL/CP-520-47751

Keywords

  • deposition temperature
  • glass substrates
  • solar cells

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