Abstract
In this paper, we present our work on devices fabricated using CdTe films deposited by close-spaced sublimation using substrate temperatures in the range of 450° to 620° C. We studied devices prepared on Saint-Gobain soda lime SGG Diamant and Corning 7059 borosilicate glass substrates. We used four types of contact: SnO2:F, ITO, CTO, and Saint-Gobain AZO with and without high-resistivity buffer layers. We used a variety of buffer layers: undoped SnO2, zinc tin oxide (ZTO), and proprietary Saint-Gobain buffer layers. A buffer layer is crucial for devices using CTO and AZO as the front contact. For AZO layers developed by Saint-Gobain, we achieved 9% efficiency without a buffer layer and over 12% efficiency using buffer layers when CdTe films are deposited below 500° C. We used standard current density-voltage and quantum efficiency analysis to determine the device parameters.
Original language | American English |
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Pages | 340-344 |
Number of pages | 5 |
DOIs | |
State | Published - 2010 |
Event | 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 20 Jun 2010 → 25 Jun 2010 |
Conference
Conference | 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 |
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Country/Territory | United States |
City | Honolulu, HI |
Period | 20/06/10 → 25/06/10 |
NREL Publication Number
- NREL/CP-520-47751
Keywords
- deposition temperature
- glass substrates
- solar cells