Abstract
Two optical sub-bandgap transitions in CdTe thin-film solar cells have been identified using detailed transient photocapacitance and transient photocurrent spectroscopy measurements. A broad response centered at EV + 0.9 eV directly correlates with the quantity of Cu present in the absorber layer, while a second response at EV + 1.2 eV does not depend on Cu or Zn and may be an intrinsic defect. These results demonstrate the influence of Cu on the sub-bandgap density of states of CdTe, and they are critical to understanding, modeling, and improving its optoelectronic properties.
Original language | American English |
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Article number | 203903 |
Number of pages | 4 |
Journal | Applied Physics Letters |
Volume | 106 |
Issue number | 20 |
DOIs | |
State | Published - 18 May 2015 |
Bibliographical note
Publisher Copyright:© 2015 AIP Publishing LLC.
NREL Publication Number
- NREL/JA-5K00-64598