The Effect of Copper on the Sub-Bandgap Density of States of CdTe Solar Cells

Teresa Barnes; Charles Warren; Jiaojiao Li; Colin Wolden; Daniel Meysing; D. Miller; Jennifer Heath; Mark Lonergan

doi:10.1063/1.4921577

The Effect of Copper on the Sub-Bandgap Density of States of CdTe Solar Cells

Teresa Barnes
, Charles Warren
, Jiaojiao Li
, Colin Wolden
, Daniel Meysing
, D. Miller
, Jennifer Heath
, Mark Lonergan

Materials Science

Research output: Contribution to journal › Article › peer-review

14 Scopus Citations

Abstract

Two optical sub-bandgap transitions in CdTe thin-film solar cells have been identified using detailed transient photocapacitance and transient photocurrent spectroscopy measurements. A broad response centered at E_V + 0.9 eV directly correlates with the quantity of Cu present in the absorber layer, while a second response at E_V + 1.2 eV does not depend on Cu or Zn and may be an intrinsic defect. These results demonstrate the influence of Cu on the sub-bandgap density of states of CdTe, and they are critical to understanding, modeling, and improving its optoelectronic properties.

Original language	American English
Article number	203903
Number of pages	4
Journal	Applied Physics Letters
Volume	106
Issue number	20
DOIs	https://doi.org/10.1063/1.4921577 https://doi.org/10.1063/1.4921577
State	Published - 18 May 2015

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

NLR Publication Number

NREL/JA-5K00-64598

Access to Document

Cite this

@article{ee6cef2c70bb495db9ee799b8d5c3fba,

title = "The Effect of Copper on the Sub-Bandgap Density of States of CdTe Solar Cells",

abstract = "Two optical sub-bandgap transitions in CdTe thin-film solar cells have been identified using detailed transient photocapacitance and transient photocurrent spectroscopy measurements. A broad response centered at EV + 0.9 eV directly correlates with the quantity of Cu present in the absorber layer, while a second response at EV + 1.2 eV does not depend on Cu or Zn and may be an intrinsic defect. These results demonstrate the influence of Cu on the sub-bandgap density of states of CdTe, and they are critical to understanding, modeling, and improving its optoelectronic properties.",

author = "Teresa Barnes and Charles Warren and Jiaojiao Li and Colin Wolden and Daniel Meysing and D. Miller and Jennifer Heath and Mark Lonergan",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = may,

day = "18",

doi = "10.1063/1.4921577",

language = "American English",

volume = "106",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - The Effect of Copper on the Sub-Bandgap Density of States of CdTe Solar Cells

AU - Barnes, Teresa

AU - Warren, Charles

AU - Li, Jiaojiao

AU - Wolden, Colin

AU - Meysing, Daniel

AU - Miller, D.

AU - Heath, Jennifer

AU - Lonergan, Mark

PY - 2015/5/18

Y1 - 2015/5/18

N2 - Two optical sub-bandgap transitions in CdTe thin-film solar cells have been identified using detailed transient photocapacitance and transient photocurrent spectroscopy measurements. A broad response centered at EV + 0.9 eV directly correlates with the quantity of Cu present in the absorber layer, while a second response at EV + 1.2 eV does not depend on Cu or Zn and may be an intrinsic defect. These results demonstrate the influence of Cu on the sub-bandgap density of states of CdTe, and they are critical to understanding, modeling, and improving its optoelectronic properties.

AB - Two optical sub-bandgap transitions in CdTe thin-film solar cells have been identified using detailed transient photocapacitance and transient photocurrent spectroscopy measurements. A broad response centered at EV + 0.9 eV directly correlates with the quantity of Cu present in the absorber layer, while a second response at EV + 1.2 eV does not depend on Cu or Zn and may be an intrinsic defect. These results demonstrate the influence of Cu on the sub-bandgap density of states of CdTe, and they are critical to understanding, modeling, and improving its optoelectronic properties.

UR - https://www.scopus.com/pages/publications/84930005675

U2 - 10.1063/1.4921577

DO - 10.1063/1.4921577

M3 - Article

AN - SCOPUS:84930005675

SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 203903

ER -

The Effect of Copper on the Sub-Bandgap Density of States of CdTe Solar Cells

Abstract

Bibliographical note

NLR Publication Number

Access to Document

Other files and links

Fingerprint

Cite this