The Effect of Dopant Concentration and Annealing Treatments on N-Type Iodine Doped CdTe: Article No. 170625

Jing Shang, Magesh Murugesan, Samuel Bigbee-Hansen, Santosh Swain, Joel Duenow, Steve Johnston, Scott Beckman, Harvey Walker, Raine Antonio, John McCloy

Research output: Contribution to journalArticlepeer-review

6 Scopus Citations

Abstract

We report properties of highly conducting n-type cadmium telluride single crystals doped with iodine (CdTe:I). These crystals were grown with dopant concentrations in the range of 10^17 cm-3 to 10^19 cm-3 by Modified Vertical Bridgman (MVB) melt growth. Post-growth dopant activation, including Cd annealing, Te annealing, and rapid thermal annealing (RTA), was applied to improve free carrier density. The structural, optical, and electrical properties were analyzed by Glow Discharge Mass Spectroscopy (GDMS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Photoluminescence Spectroscopy (PL), optical absorption, Hall measurements, Capacitance-Voltage (CV) measurements, and time-resolved photoluminescence (TRPL). The results indicate that Cd annealing is the most effective activation method to get 100% donor activation (n is approximately 2 x 10^18 cm-3), which is close to the room temperature solubility limit of iodine. This leads to the lowest resistivity and the highest mobility. Moreover, this data suggests a potential role of Cd vacancy-related defects on electrical self-compensation.
Original languageAmerican English
Number of pages10
JournalJournal of Alloys and Compounds
Volume960
DOIs
StatePublished - 2023

NREL Publication Number

  • NREL/JA-5K00-85337

Keywords

  • annealing
  • CdTe
  • crystal growth
  • Hall-effect
  • iodine doped
  • time resolved photoluminescence

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