TY - JOUR
T1 - The Effect of Dopant Concentration and Annealing Treatments on N-Type Iodine Doped CdTe
T2 - Article No. 170625
AU - Shang, Jing
AU - Murugesan, Magesh
AU - Bigbee-Hansen, Samuel
AU - Swain, Santosh
AU - Duenow, Joel
AU - Johnston, Steve
AU - Beckman, Scott
AU - Walker, Harvey
AU - Antonio, Raine
AU - McCloy, John
PY - 2023
Y1 - 2023
N2 - We report properties of highly conducting n-type cadmium telluride single crystals doped with iodine (CdTe:I). These crystals were grown with dopant concentrations in the range of 10^17 cm-3 to 10^19 cm-3 by Modified Vertical Bridgman (MVB) melt growth. Post-growth dopant activation, including Cd annealing, Te annealing, and rapid thermal annealing (RTA), was applied to improve free carrier density. The structural, optical, and electrical properties were analyzed by Glow Discharge Mass Spectroscopy (GDMS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Photoluminescence Spectroscopy (PL), optical absorption, Hall measurements, Capacitance-Voltage (CV) measurements, and time-resolved photoluminescence (TRPL). The results indicate that Cd annealing is the most effective activation method to get 100% donor activation (n is approximately 2 x 10^18 cm-3), which is close to the room temperature solubility limit of iodine. This leads to the lowest resistivity and the highest mobility. Moreover, this data suggests a potential role of Cd vacancy-related defects on electrical self-compensation.
AB - We report properties of highly conducting n-type cadmium telluride single crystals doped with iodine (CdTe:I). These crystals were grown with dopant concentrations in the range of 10^17 cm-3 to 10^19 cm-3 by Modified Vertical Bridgman (MVB) melt growth. Post-growth dopant activation, including Cd annealing, Te annealing, and rapid thermal annealing (RTA), was applied to improve free carrier density. The structural, optical, and electrical properties were analyzed by Glow Discharge Mass Spectroscopy (GDMS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Photoluminescence Spectroscopy (PL), optical absorption, Hall measurements, Capacitance-Voltage (CV) measurements, and time-resolved photoluminescence (TRPL). The results indicate that Cd annealing is the most effective activation method to get 100% donor activation (n is approximately 2 x 10^18 cm-3), which is close to the room temperature solubility limit of iodine. This leads to the lowest resistivity and the highest mobility. Moreover, this data suggests a potential role of Cd vacancy-related defects on electrical self-compensation.
KW - annealing
KW - CdTe
KW - crystal growth
KW - Hall-effect
KW - iodine doped
KW - time resolved photoluminescence
UR - http://www.scopus.com/inward/record.url?scp=85160258614&partnerID=8YFLogxK
U2 - 10.1016/j.jallcom.2023.170625
DO - 10.1016/j.jallcom.2023.170625
M3 - Article
SN - 0925-8388
VL - 960
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
ER -