Abstract
The effect of grain boundary (GB) misorientation on selenium (Se) diffusion and bandgap grading in cadmium telluride (CdTe) devices incorporating a CdSexTe1-x alloy has been investigated using high-resolution cathodoluminescence (CL) and electron backscatter diffraction (EBSD). Using CL, we map the bandgap variations and the Selenium concentration across the absorber. EBSD provides corresponding information on grain boundary orientation from the same cross-section of the device. This correlative analysis reveals that larger grain boundary misorientation angles promote greater Se diffusion, resulting in a lower bandgap (BG) in grains associated with this type of grain boundary.
| Original language | American English |
|---|---|
| Pages | 422-424 |
| Number of pages | 3 |
| DOIs | |
| State | Published - 2025 |
| Event | 2025 IEEE 53rd Photovoltaic Specialists Conference (PVSC) - Montreal, Canada Duration: 8 Jun 2025 → 13 Jun 2025 |
Conference
| Conference | 2025 IEEE 53rd Photovoltaic Specialists Conference (PVSC) |
|---|---|
| City | Montreal, Canada |
| Period | 8/06/25 → 13/06/25 |
NLR Publication Number
- NLR/CP-5K00-98960
Keywords
- electron backscatter diffraction
- grain boundaries
- next generation networking
- optimization
- performance evaluation
- photonic band gap
- photovoltaic cells
- photovoltaic systems
- selenium
- tellurium