The Effect of the Film H Content on the Crystallizaiton of Laser Processed and Thermally Annealed HWCVD a-Si:H

A. H. Mahan; M. S. Dabney; P. A. Parilla; D. S. Ginley

doi:10.1002/pssc.200982706

The Effect of the Film H Content on the Crystallizaiton of Laser Processed and Thermally Annealed HWCVD a-Si:H

A. H. Mahan, M. S. Dabney, P. A. Parilla, D. S. Ginley

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

1 Scopus Citations

Abstract

We demonstrate the use of laser processing to affect the nucleation of crystallites in thermally annealed HWCVD a-Si:H thin films. The influence of film H content is investigated by XRD measurements during in situ 600 °C thermal anneal on both as grown films and on films that have been laser irradiated. All laser irradiated films show a reduced incubation time (τ_o) for crystallization compared to as-grown films, with the largest differences exhibited for samples with higher film H. We show that a recently developed model for a nucleation center in a-Si:H can be used to explain how the film H content affects this change in τ_o and also predict the magnitude of this change with laser processing.

Original language	American English
Pages (from-to)	596-599
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.200982706 https://doi.org/10.1002/pssc.200982706
State	Published - 2010
Event	23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23 - Utrecht, Netherlands Duration: 23 Aug 2009 → 28 Aug 2009

NREL Publication Number

NREL/JA-520-48842

Keywords

hot-wire chemical vapor deposition
HWCVD
silicon thin films

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title = "The Effect of the Film H Content on the Crystallizaiton of Laser Processed and Thermally Annealed HWCVD a-Si:H",

abstract = "We demonstrate the use of laser processing to affect the nucleation of crystallites in thermally annealed HWCVD a-Si:H thin films. The influence of film H content is investigated by XRD measurements during in situ 600 °C thermal anneal on both as grown films and on films that have been laser irradiated. All laser irradiated films show a reduced incubation time (τo) for crystallization compared to as-grown films, with the largest differences exhibited for samples with higher film H. We show that a recently developed model for a nucleation center in a-Si:H can be used to explain how the film H content affects this change in τo and also predict the magnitude of this change with laser processing.",

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AU - Mahan, A. H.

AU - Dabney, M. S.

AU - Parilla, P. A.

AU - Ginley, D. S.

PY - 2010

Y1 - 2010

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AB - We demonstrate the use of laser processing to affect the nucleation of crystallites in thermally annealed HWCVD a-Si:H thin films. The influence of film H content is investigated by XRD measurements during in situ 600 °C thermal anneal on both as grown films and on films that have been laser irradiated. All laser irradiated films show a reduced incubation time (τo) for crystallization compared to as-grown films, with the largest differences exhibited for samples with higher film H. We show that a recently developed model for a nucleation center in a-Si:H can be used to explain how the film H content affects this change in τo and also predict the magnitude of this change with laser processing.

KW - hot-wire chemical vapor deposition

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KW - silicon thin films

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The Effect of the Film H Content on the Crystallizaiton of Laser Processed and Thermally Annealed HWCVD a-Si:H

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Keywords

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