The Effect of ZnO Replacement by ZnMgO on ZnO/CdS/Cu(In,Ga)Se2 Solar Cells

Jian V. Li; Xiaonan Li; Ana Kanevce; Yanfa Yan; Ingrid Repins

doi:10.1109/PVSC.2009.5411716

The Effect of ZnO Replacement by ZnMgO on ZnO/CdS/Cu(In,Ga)Se2 Solar Cells

Jian V. Li, Xiaonan Li, Ana Kanevce, Yanfa Yan, Ingrid Repins

Materials, Chemical, and Computational Science

Research output: Contribution to conference › Paper › peer-review

Abstract

We studied the electrical properties and device performance of the Cu(In,Ga)Se₂ solar cell when i-ZnO is replaced by i-ZnMgO. Admittance spectroscopy reveals a deep level attributed to the i-ZnMgO/CdS interface. The capacitance voltage experiment indicates a pronounced reduction of carrier concentration in the p-CIGS absorber. Inserting a thin i-ZnO layer between i-ZnMgO and CdS completely removes the detrimental effect of the interface states and partially reverts the carrier concentration reduction effect. Device simulations indicate that the open circuit voltage is lowered due to the carrier concentration reduction while the fill factor is sensitive to the defects at the interface.

Original language	American English
Pages	127-130
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2009.5411716 https://doi.org/10.1109/PVSC.2009.5411716
State	Published - 2009
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: 7 Jun 2009 → 12 Jun 2009

Conference

Conference	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	7/06/09 → 12/06/09

NREL Publication Number

NREL/CP-520-46052

Keywords

materials science
photovoltaics
solar energy

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title = "The Effect of ZnO Replacement by ZnMgO on ZnO/CdS/Cu(In,Ga)Se2 Solar Cells",

abstract = "We studied the electrical properties and device performance of the Cu(In,Ga)Se2 solar cell when i-ZnO is replaced by i-ZnMgO. Admittance spectroscopy reveals a deep level attributed to the i-ZnMgO/CdS interface. The capacitance voltage experiment indicates a pronounced reduction of carrier concentration in the p-CIGS absorber. Inserting a thin i-ZnO layer between i-ZnMgO and CdS completely removes the detrimental effect of the interface states and partially reverts the carrier concentration reduction effect. Device simulations indicate that the open circuit voltage is lowered due to the carrier concentration reduction while the fill factor is sensitive to the defects at the interface.",

keywords = "materials science, photovoltaics, solar energy",

author = "Li, {Jian V.} and Xiaonan Li and Ana Kanevce and Yanfa Yan and Ingrid Repins",

year = "2009",

doi = "10.1109/PVSC.2009.5411716",

language = "American English",

pages = "127--130",

note = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

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T1 - The Effect of ZnO Replacement by ZnMgO on ZnO/CdS/Cu(In,Ga)Se2 Solar Cells

AU - Li, Jian V.

AU - Li, Xiaonan

AU - Kanevce, Ana

AU - Yan, Yanfa

AU - Repins, Ingrid

PY - 2009

Y1 - 2009

N2 - We studied the electrical properties and device performance of the Cu(In,Ga)Se2 solar cell when i-ZnO is replaced by i-ZnMgO. Admittance spectroscopy reveals a deep level attributed to the i-ZnMgO/CdS interface. The capacitance voltage experiment indicates a pronounced reduction of carrier concentration in the p-CIGS absorber. Inserting a thin i-ZnO layer between i-ZnMgO and CdS completely removes the detrimental effect of the interface states and partially reverts the carrier concentration reduction effect. Device simulations indicate that the open circuit voltage is lowered due to the carrier concentration reduction while the fill factor is sensitive to the defects at the interface.

AB - We studied the electrical properties and device performance of the Cu(In,Ga)Se2 solar cell when i-ZnO is replaced by i-ZnMgO. Admittance spectroscopy reveals a deep level attributed to the i-ZnMgO/CdS interface. The capacitance voltage experiment indicates a pronounced reduction of carrier concentration in the p-CIGS absorber. Inserting a thin i-ZnO layer between i-ZnMgO and CdS completely removes the detrimental effect of the interface states and partially reverts the carrier concentration reduction effect. Device simulations indicate that the open circuit voltage is lowered due to the carrier concentration reduction while the fill factor is sensitive to the defects at the interface.

KW - materials science

KW - photovoltaics

KW - solar energy

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U2 - 10.1109/PVSC.2009.5411716

DO - 10.1109/PVSC.2009.5411716

M3 - Paper

AN - SCOPUS:77951581094

SP - 127

EP - 130

T2 - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

Y2 - 7 June 2009 through 12 June 2009

ER -

The Effect of ZnO Replacement by ZnMgO on ZnO/CdS/Cu(In,Ga)Se2 Solar Cells

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Keywords

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