Abstract
A back contact containing a sputtered ZnTe:Cu interface layer can produce high-performing thin-film CdS/CdTe photovoltaic devices. We have found that varying the ZnTe:Cu sputtering target fabrication processes and deposition temperature can affect material properties of the ZnTe:Cu films and the resulting device performance. Two different target recipes with various copper contents were used to study changes in the compositional, structural, optical, and electrical properties of ZnTe:Cu films. Substrate temperature during deposition was also varied to investigate the temperature dependence of the films. It was found that the target recipe, Cu concentration in the target, and deposition temperature affect the composition of the ZnTe:Cu films, which impacts their structural, optical, and electrical properties.
Original language | American English |
---|---|
Number of pages | 6 |
DOIs | |
State | Published - 14 Dec 2015 |
Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015 |
Conference
Conference | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
---|---|
Country/Territory | United States |
City | New Orleans |
Period | 14/06/15 → 19/06/15 |
Bibliographical note
Publisher Copyright:© 2015 IEEE.
NREL Publication Number
- NREL/CP-5K00-64486
Keywords
- CdTe
- sputtering target
- substrate deposition temperature
- ZnTe contact interface
- ZnTe:Cu