The Electrical, Optical and Structural Properties of InxZn1-xOy (0<x<1) Thin Films by Combinatorial Techniques

Matthew P. Taylor; Dennis W. Readey; Charles W. Teplin; Maikel F.A.M. van Hest; Jeff L. Alleman; Matthew S. Dabney; Lynn M. Gedvilas; Brian M. Keyes; Bobby To; John D. Perkins; David S. Ginley

doi:10.1088/0957-0233/16/1/012

The Electrical, Optical and Structural Properties of InxZn1-xOy (0<x<1) Thin Films by Combinatorial Techniques

Matthew P. Taylor, Dennis W. Readey, Charles W. Teplin, Maikel F.A.M. van Hest, Jeff L. Alleman, Matthew S. Dabney, Lynn M. Gedvilas, Brian M. Keyes, Bobby To, John D. Perkins, David S. Ginley

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Abstract

Indium-zinc-oxide (IZO) compositional libraries were deposited with dc magnetron sputtering onto glass substrates at 100 °C and analysed with high throughput, combinatorial techniques. The composition range from 4 to 95 at% In for Zn was explored. A peak in conductivity with σ > 3000 (Ω cm)^-1 was observed at an indium content of ∼ 70%. The mobility exceeded 30 cm² (V s) ^-1 and the carrier concentrations were greater than 8 × 10²⁰ cm^-3. Crystalline phases were observed for In concentrations less than 45% and greater than 80% with an intermediate amorphous region. The low indium content films have a zinc oxide type structure with a ZnO (002) spacing ranging from ∼ 2.61 to 2.85 Å for 4% In and 45% In, respectively. For indium contents between 82% and 95%, the In₂O₃ (222) spacing varied from 2.98 to 2.99 Å. Regardless of the composition or the degree of crystallinity, all films showed high optical transparency with the transmission >80% across the visible spectrum.

Original language	American English
Pages (from-to)	90-94
Number of pages	5
Journal	Measurement Science and Technology
Volume	16
Issue number	1
DOIs	https://doi.org/10.1088/0957-0233/16/1/012 https://doi.org/10.1088/0957-0233/16/1/012
State	Published - Jan 2005

NREL Publication Number

NREL/JA-520-37896

Keywords

Combinatorial
Indium-zinc-oxide
Sputtering
Thin films
Transparent conducting oxide

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Taylor, M. P., Readey, D. W., Teplin, C. W., van Hest, M. F. A. M., Alleman, J. L., Dabney, M. S., Gedvilas, L. M., Keyes, B. M., To, B., Perkins, J. D., & Ginley, D. S. (2005). The Electrical, Optical and Structural Properties of InxZn1-xOy (0<x<1) Thin Films by Combinatorial Techniques. Measurement Science and Technology, 16(1), 90-94. https://doi.org/10.1088/0957-0233/16/1/012, https://doi.org/10.1088/0957-0233/16/1/012

@article{42f38a994adc481085263b09c5987f31,

title = "The Electrical, Optical and Structural Properties of InxZn1-xOy (0<x<1) Thin Films by Combinatorial Techniques",

abstract = "Indium-zinc-oxide (IZO) compositional libraries were deposited with dc magnetron sputtering onto glass substrates at 100 °C and analysed with high throughput, combinatorial techniques. The composition range from 4 to 95 at% In for Zn was explored. A peak in conductivity with σ > 3000 (Ω cm)-1 was observed at an indium content of ∼ 70%. The mobility exceeded 30 cm2 (V s) -1 and the carrier concentrations were greater than 8 × 1020 cm-3. Crystalline phases were observed for In concentrations less than 45% and greater than 80% with an intermediate amorphous region. The low indium content films have a zinc oxide type structure with a ZnO (002) spacing ranging from ∼ 2.61 to 2.85 {\AA} for 4% In and 45% In, respectively. For indium contents between 82% and 95%, the In2O3 (222) spacing varied from 2.98 to 2.99 {\AA}. Regardless of the composition or the degree of crystallinity, all films showed high optical transparency with the transmission >80% across the visible spectrum.",

keywords = "Combinatorial, Indium-zinc-oxide, Sputtering, Thin films, Transparent conducting oxide",

author = "Taylor, {Matthew P.} and Readey, {Dennis W.} and Teplin, {Charles W.} and {van Hest}, {Maikel F.A.M.} and Alleman, {Jeff L.} and Dabney, {Matthew S.} and Gedvilas, {Lynn M.} and Keyes, {Brian M.} and Bobby To and Perkins, {John D.} and Ginley, {David S.}",

year = "2005",

month = jan,

doi = "10.1088/0957-0233/16/1/012",

language = "American English",

volume = "16",

pages = "90--94",

journal = "Measurement Science and Technology",

issn = "0957-0233",

publisher = "IOP Publishing Ltd.",

number = "1",

}

Taylor, MP, Readey, DW, Teplin, CW, van Hest, MFAM, Alleman, JL, Dabney, MS, Gedvilas, LM, Keyes, BM, To, B, Perkins, JD & Ginley, DS 2005, 'The Electrical, Optical and Structural Properties of InxZn1-xOy (0<x<1) Thin Films by Combinatorial Techniques', Measurement Science and Technology, vol. 16, no. 1, pp. 90-94. https://doi.org/10.1088/0957-0233/16/1/012, https://doi.org/10.1088/0957-0233/16/1/012

TY - JOUR

T1 - The Electrical, Optical and Structural Properties of InxZn1-xOy (0<x<1) Thin Films by Combinatorial Techniques

AU - Taylor, Matthew P.

AU - Readey, Dennis W.

AU - Teplin, Charles W.

AU - van Hest, Maikel F.A.M.

AU - Alleman, Jeff L.

AU - Dabney, Matthew S.

AU - Gedvilas, Lynn M.

AU - Keyes, Brian M.

AU - To, Bobby

AU - Perkins, John D.

AU - Ginley, David S.

PY - 2005/1

Y1 - 2005/1

N2 - Indium-zinc-oxide (IZO) compositional libraries were deposited with dc magnetron sputtering onto glass substrates at 100 °C and analysed with high throughput, combinatorial techniques. The composition range from 4 to 95 at% In for Zn was explored. A peak in conductivity with σ > 3000 (Ω cm)-1 was observed at an indium content of ∼ 70%. The mobility exceeded 30 cm2 (V s) -1 and the carrier concentrations were greater than 8 × 1020 cm-3. Crystalline phases were observed for In concentrations less than 45% and greater than 80% with an intermediate amorphous region. The low indium content films have a zinc oxide type structure with a ZnO (002) spacing ranging from ∼ 2.61 to 2.85 Å for 4% In and 45% In, respectively. For indium contents between 82% and 95%, the In2O3 (222) spacing varied from 2.98 to 2.99 Å. Regardless of the composition or the degree of crystallinity, all films showed high optical transparency with the transmission >80% across the visible spectrum.

AB - Indium-zinc-oxide (IZO) compositional libraries were deposited with dc magnetron sputtering onto glass substrates at 100 °C and analysed with high throughput, combinatorial techniques. The composition range from 4 to 95 at% In for Zn was explored. A peak in conductivity with σ > 3000 (Ω cm)-1 was observed at an indium content of ∼ 70%. The mobility exceeded 30 cm2 (V s) -1 and the carrier concentrations were greater than 8 × 1020 cm-3. Crystalline phases were observed for In concentrations less than 45% and greater than 80% with an intermediate amorphous region. The low indium content films have a zinc oxide type structure with a ZnO (002) spacing ranging from ∼ 2.61 to 2.85 Å for 4% In and 45% In, respectively. For indium contents between 82% and 95%, the In2O3 (222) spacing varied from 2.98 to 2.99 Å. Regardless of the composition or the degree of crystallinity, all films showed high optical transparency with the transmission >80% across the visible spectrum.

KW - Combinatorial

KW - Indium-zinc-oxide

KW - Sputtering

KW - Thin films

KW - Transparent conducting oxide

UR - http://www.scopus.com/inward/record.url?scp=19944432349&partnerID=8YFLogxK

U2 - 10.1088/0957-0233/16/1/012

DO - 10.1088/0957-0233/16/1/012

M3 - Article

AN - SCOPUS:19944432349

SN - 0957-0233

VL - 16

SP - 90

EP - 94

JO - Measurement Science and Technology

JF - Measurement Science and Technology

IS - 1

ER -

The Electrical, Optical and Structural Properties of InxZn1-xOy (0<x<1) Thin Films by Combinatorial Techniques

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Keywords

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