The Electronic Consequences of Multivalent Elements in Inorganic Solar Absorbers: Multivalency of Sn in Cu2ZnSnS4

Koushik Biswas, Stephan Lany, Alex Zunger

Research output: Contribution to journalArticlepeer-review

121 Scopus Citations

Abstract

Multivalent transition metal impurities in semiconductors are known to create deep levels inside the band gap that are associated with changes in the oxidation state. Some emerging functional semiconductor materials now contain multivalent elements not just as impurities, but as part of their structural skeleton ("multivalent semiconductors"). This raises the possibility that the performance of such materials may be affected by those skeleton elements transitioning from one oxidation state to another, in response to charge-altering perturbations such as illumination or doping. Here we address the correlation between multivalency and the electronic properties of these new semiconductor materials.

Original languageAmerican English
Article numberArticle No. 201902
Number of pages3
JournalApplied Physics Letters
Volume96
Issue number20
DOIs
StatePublished - 17 May 2010

NREL Publication Number

  • NREL/JA-5900-48194

Keywords

  • multivalent elements
  • semiconductor materials

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