The Formation of CuInSe2 Thin Films by Rapid Thermal Processing

G. D. Mooney, A. M. Hermann, J. R. Tuttle, D. S. Albin, R. Noufi

Research output: Contribution to journalArticlepeer-review

10 Scopus Citations


Formation of polycrystalline thin film CuInSe2 was achieved by the rapid thermal processing of vacuum-deposited copper, indium, and selenium. Films were fabricated and characterized in three composition regions: copper-poor (approximately 20 at.% Cu). stoichiometric (25 at.% Cu) and copper-rich (approximately 28 at.% Cu). Characterization results including X-ray diffraction analysis, electron probe for microanalysis, scanning electron microscopy, and optical reflection and transmission measurements are presented. The results show that nearly single-phase material has been formed from co-deposited precursors with a post-deposition annealing time of less than 2 min. The films have smooth morphologies amenable for photovoltaic device fabrication, optical absorption coefficients in the high 104 cm-1 range, and an optical band gap of 1.0 eV.

Original languageAmerican English
Pages (from-to)69-77
Number of pages9
JournalSolar Cells
Issue number1-4
StatePublished - 1991
Externally publishedYes

Bibliographical note

Work performed by Department of Physics, University of Colorado, Boulder, Colorado, and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

  • ACNR/JA-212-12407


Dive into the research topics of 'The Formation of CuInSe2 Thin Films by Rapid Thermal Processing'. Together they form a unique fingerprint.

Cite this