The Formation of CuInSe2 Thin Films by Rapid Thermal Processing

G. D. Mooney; A. M. Hermann; J. R. Tuttle; D. S. Albin; R. Noufi

doi:10.1016/0379-6787(91)90039-R

The Formation of CuInSe2 Thin Films by Rapid Thermal Processing

G. D. Mooney
, A. M. Hermann
, J. R. Tuttle
, D. S. Albin
, R. Noufi

Research output: Contribution to journal › Article › peer-review

10 Scopus Citations

Abstract

Formation of polycrystalline thin film CuInSe₂ was achieved by the rapid thermal processing of vacuum-deposited copper, indium, and selenium. Films were fabricated and characterized in three composition regions: copper-poor (approximately 20 at.% Cu). stoichiometric (25 at.% Cu) and copper-rich (approximately 28 at.% Cu). Characterization results including X-ray diffraction analysis, electron probe for microanalysis, scanning electron microscopy, and optical reflection and transmission measurements are presented. The results show that nearly single-phase material has been formed from co-deposited precursors with a post-deposition annealing time of less than 2 min. The films have smooth morphologies amenable for photovoltaic device fabrication, optical absorption coefficients in the high 10⁴ cm^-1 range, and an optical band gap of 1.0 eV.

Original language	American English
Pages (from-to)	69-77
Number of pages	9
Journal	Solar Cells
Volume	30
Issue number	1-4
DOIs	https://doi.org/10.1016/0379-6787(91)90039-R https://doi.org/10.1016/0379-6787(91)90039-R
State	Published - 1991
Externally published	Yes

Bibliographical note

Work performed by Department of Physics, University of Colorado, Boulder, Colorado, and Solar Energy Research Institute, Golden, Colorado

NLR Publication Number

ACNR/JA-212-12407

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Cite this

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title = "The Formation of CuInSe2 Thin Films by Rapid Thermal Processing",

abstract = "Formation of polycrystalline thin film CuInSe2 was achieved by the rapid thermal processing of vacuum-deposited copper, indium, and selenium. Films were fabricated and characterized in three composition regions: copper-poor (approximately 20 at.\% Cu). stoichiometric (25 at.\% Cu) and copper-rich (approximately 28 at.\% Cu). Characterization results including X-ray diffraction analysis, electron probe for microanalysis, scanning electron microscopy, and optical reflection and transmission measurements are presented. The results show that nearly single-phase material has been formed from co-deposited precursors with a post-deposition annealing time of less than 2 min. The films have smooth morphologies amenable for photovoltaic device fabrication, optical absorption coefficients in the high 104 cm-1 range, and an optical band gap of 1.0 eV.",

author = "Mooney, \{G. D.\} and Hermann, \{A. M.\} and Tuttle, \{J. R.\} and Albin, \{D. S.\} and R. Noufi",

note = "Work performed by Department of Physics, University of Colorado, Boulder, Colorado, and Solar Energy Research Institute, Golden, Colorado",

year = "1991",

doi = "10.1016/0379-6787(91)90039-R",

language = "American English",

volume = "30",

pages = "69--77",

journal = "Solar Cells",

issn = "0379-6787",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - The Formation of CuInSe2 Thin Films by Rapid Thermal Processing

AU - Mooney, G. D.

AU - Hermann, A. M.

AU - Tuttle, J. R.

AU - Albin, D. S.

AU - Noufi, R.

N1 - Work performed by Department of Physics, University of Colorado, Boulder, Colorado, and Solar Energy Research Institute, Golden, Colorado

PY - 1991

Y1 - 1991

N2 - Formation of polycrystalline thin film CuInSe2 was achieved by the rapid thermal processing of vacuum-deposited copper, indium, and selenium. Films were fabricated and characterized in three composition regions: copper-poor (approximately 20 at.% Cu). stoichiometric (25 at.% Cu) and copper-rich (approximately 28 at.% Cu). Characterization results including X-ray diffraction analysis, electron probe for microanalysis, scanning electron microscopy, and optical reflection and transmission measurements are presented. The results show that nearly single-phase material has been formed from co-deposited precursors with a post-deposition annealing time of less than 2 min. The films have smooth morphologies amenable for photovoltaic device fabrication, optical absorption coefficients in the high 104 cm-1 range, and an optical band gap of 1.0 eV.

AB - Formation of polycrystalline thin film CuInSe2 was achieved by the rapid thermal processing of vacuum-deposited copper, indium, and selenium. Films were fabricated and characterized in three composition regions: copper-poor (approximately 20 at.% Cu). stoichiometric (25 at.% Cu) and copper-rich (approximately 28 at.% Cu). Characterization results including X-ray diffraction analysis, electron probe for microanalysis, scanning electron microscopy, and optical reflection and transmission measurements are presented. The results show that nearly single-phase material has been formed from co-deposited precursors with a post-deposition annealing time of less than 2 min. The films have smooth morphologies amenable for photovoltaic device fabrication, optical absorption coefficients in the high 104 cm-1 range, and an optical band gap of 1.0 eV.

UR - https://www.scopus.com/pages/publications/0026152369

U2 - 10.1016/0379-6787(91)90039-R

DO - 10.1016/0379-6787(91)90039-R

M3 - Article

AN - SCOPUS:0026152369

SN - 0379-6787

VL - 30

SP - 69

EP - 77

JO - Solar Cells

JF - Solar Cells

IS - 1-4

ER -

The Formation of CuInSe2 Thin Films by Rapid Thermal Processing

Abstract

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