The Impact of Cu on Recombination in High Voltage CdTe Solar Cells

Darius Kuciauskas, Patricia Dippo, Wyatt Metzger, Zhibo Zhao, Long Cheng, Andrei Los, Markus Gloeckler, Ana Kanevce

Research output: Contribution to journalArticlepeer-review

38 Scopus Citations

Abstract

Using photoluminescence spectroscopy, we construct a recombination model for state-of-the-art CdTe solar cells doped with Cu. We observe that Cu on Cd sites form a dominant acceptor state about 150 meV from the valence band. Although it is intuitive that this state can increase hole density, we also find that this relatively shallow dopant can also limit lifetime. Consequently, CdTe solar cells doped with Cu could have a lifetime limitation inversely proportional to the hole concentration.

Original languageAmerican English
Article numberArticle No. 243906
Number of pages5
JournalApplied Physics Letters
Volume107
Issue number24
DOIs
StatePublished - 14 Dec 2015

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

NREL Publication Number

  • NREL/JA-5900-65705

Keywords

  • doping
  • electron densities of states
  • III-VI semiconductors
  • photoluminescence
  • solar cells

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