The Mechanism for the High-Quality Single-Phase Growth of MnSi Films on Si(111) in the Presence of Sb Flux

Y. Yan; M. M. Al-Jassim; K. Matsuda; H. Tatsuoka; H. Kuwabara; S. J. Pennycook

doi:10.1063/1.125182

The Mechanism for the High-Quality Single-Phase Growth of MnSi Films on Si(111) in the Presence of Sb Flux

Y. Yan, M. M. Al-Jassim, K. Matsuda, H. Tatsuoka, H. Kuwabara, S. J. Pennycook

Materials Science

Research output: Contribution to journal › Article › peer-review

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Abstract

The microstructures of high-quality single-phase MnSi layers grown on Si (111) by Mn deposition and reaction with Si in the presence of Sb flux are characterized by Z-contrast imaging. It is found that there is a transition layer consisting of two Sb monolayers sandwiching a Mn layer in between the Si substrate and the single-phase MnSi film. This Sb-Mn-Sb sandwich layer effectively prevents deposited Mn atoms from direct reaction with Si atoms in the substrate to form Mn silicides. This explains why high-quality single-phase MnSi layers can be grown with remarkably smooth interface on Si (111) substrates.

Original language	American English
Pages (from-to)	2894-2896
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	19
DOIs	https://doi.org/10.1063/1.125182 https://doi.org/10.1063/1.125182
State	Published - 8 Nov 1999

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NREL/JA-520-27880

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title = "The Mechanism for the High-Quality Single-Phase Growth of MnSi Films on Si(111) in the Presence of Sb Flux",

abstract = "The microstructures of high-quality single-phase MnSi layers grown on Si (111) by Mn deposition and reaction with Si in the presence of Sb flux are characterized by Z-contrast imaging. It is found that there is a transition layer consisting of two Sb monolayers sandwiching a Mn layer in between the Si substrate and the single-phase MnSi film. This Sb-Mn-Sb sandwich layer effectively prevents deposited Mn atoms from direct reaction with Si atoms in the substrate to form Mn silicides. This explains why high-quality single-phase MnSi layers can be grown with remarkably smooth interface on Si (111) substrates.",

author = "Y. Yan and Al-Jassim, {M. M.} and K. Matsuda and H. Tatsuoka and H. Kuwabara and Pennycook, {S. J.}",

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AU - Yan, Y.

AU - Al-Jassim, M. M.

AU - Matsuda, K.

AU - Tatsuoka, H.

AU - Kuwabara, H.

AU - Pennycook, S. J.

PY - 1999/11/8

Y1 - 1999/11/8

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AB - The microstructures of high-quality single-phase MnSi layers grown on Si (111) by Mn deposition and reaction with Si in the presence of Sb flux are characterized by Z-contrast imaging. It is found that there is a transition layer consisting of two Sb monolayers sandwiching a Mn layer in between the Si substrate and the single-phase MnSi film. This Sb-Mn-Sb sandwich layer effectively prevents deposited Mn atoms from direct reaction with Si atoms in the substrate to form Mn silicides. This explains why high-quality single-phase MnSi layers can be grown with remarkably smooth interface on Si (111) substrates.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

The Mechanism for the High-Quality Single-Phase Growth of MnSi Films on Si(111) in the Presence of Sb Flux

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