The Mechanism for the High-Quality Single-Phase Growth of MnSi Films on Si(111) in the Presence of Sb Flux

Y. Yan; M. M. Al-Jassim; K. Matsuda; H. Tatsuoka; H. Kuwabara; S. J. Pennycook

doi:10.1063/1.125182

The Mechanism for the High-Quality Single-Phase Growth of MnSi Films on Si(111) in the Presence of Sb Flux

Y. Yan
, M. M. Al-Jassim
, K. Matsuda
, H. Tatsuoka
, H. Kuwabara
, S. J. Pennycook

Materials Science

Research output: Contribution to journal › Article › peer-review

4 Scopus Citations

Abstract

The microstructures of high-quality single-phase MnSi layers grown on Si (111) by Mn deposition and reaction with Si in the presence of Sb flux are characterized by Z-contrast imaging. It is found that there is a transition layer consisting of two Sb monolayers sandwiching a Mn layer in between the Si substrate and the single-phase MnSi film. This Sb-Mn-Sb sandwich layer effectively prevents deposited Mn atoms from direct reaction with Si atoms in the substrate to form Mn silicides. This explains why high-quality single-phase MnSi layers can be grown with remarkably smooth interface on Si (111) substrates.

Original language	American English
Pages (from-to)	2894-2896
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	19
DOIs	https://doi.org/10.1063/1.125182 https://doi.org/10.1063/1.125182
State	Published - 8 Nov 1999

NLR Publication Number

NREL/JA-520-27880

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title = "The Mechanism for the High-Quality Single-Phase Growth of MnSi Films on Si(111) in the Presence of Sb Flux",

abstract = "The microstructures of high-quality single-phase MnSi layers grown on Si (111) by Mn deposition and reaction with Si in the presence of Sb flux are characterized by Z-contrast imaging. It is found that there is a transition layer consisting of two Sb monolayers sandwiching a Mn layer in between the Si substrate and the single-phase MnSi film. This Sb-Mn-Sb sandwich layer effectively prevents deposited Mn atoms from direct reaction with Si atoms in the substrate to form Mn silicides. This explains why high-quality single-phase MnSi layers can be grown with remarkably smooth interface on Si (111) substrates.",

author = "Y. Yan and Al-Jassim, \{M. M.\} and K. Matsuda and H. Tatsuoka and H. Kuwabara and Pennycook, \{S. J.\}",

year = "1999",

month = nov,

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doi = "10.1063/1.125182",

language = "American English",

volume = "75",

pages = "2894--2896",

journal = "Applied Physics Letters",

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T1 - The Mechanism for the High-Quality Single-Phase Growth of MnSi Films on Si(111) in the Presence of Sb Flux

AU - Yan, Y.

AU - Al-Jassim, M. M.

AU - Matsuda, K.

AU - Tatsuoka, H.

AU - Kuwabara, H.

AU - Pennycook, S. J.

PY - 1999/11/8

Y1 - 1999/11/8

N2 - The microstructures of high-quality single-phase MnSi layers grown on Si (111) by Mn deposition and reaction with Si in the presence of Sb flux are characterized by Z-contrast imaging. It is found that there is a transition layer consisting of two Sb monolayers sandwiching a Mn layer in between the Si substrate and the single-phase MnSi film. This Sb-Mn-Sb sandwich layer effectively prevents deposited Mn atoms from direct reaction with Si atoms in the substrate to form Mn silicides. This explains why high-quality single-phase MnSi layers can be grown with remarkably smooth interface on Si (111) substrates.

AB - The microstructures of high-quality single-phase MnSi layers grown on Si (111) by Mn deposition and reaction with Si in the presence of Sb flux are characterized by Z-contrast imaging. It is found that there is a transition layer consisting of two Sb monolayers sandwiching a Mn layer in between the Si substrate and the single-phase MnSi film. This Sb-Mn-Sb sandwich layer effectively prevents deposited Mn atoms from direct reaction with Si atoms in the substrate to form Mn silicides. This explains why high-quality single-phase MnSi layers can be grown with remarkably smooth interface on Si (111) substrates.

UR - https://www.scopus.com/pages/publications/0001145192

U2 - 10.1063/1.125182

DO - 10.1063/1.125182

M3 - Article

AN - SCOPUS:0001145192

SN - 0003-6951

VL - 75

SP - 2894

EP - 2896

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

The Mechanism for the High-Quality Single-Phase Growth of MnSi Films on Si(111) in the Presence of Sb Flux

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