Abstract
Thin-film CdTe solar cells are very promising for future cost-effective photovoltaics. The photovoltaic effect in these cells is based on the extraction of photoexcited carders by the field provided by the CdTe/CdS heterojunction. An additional interface with non-rectifying characteristics is needed to close the external circuit on the other side of the CdTe thin film. Finally, the transport of photoexcited carriers is influenced by the presence of grain boundaries (GBs). In this contribution, we investigate several aspects of these interfaces and their effects on the operation of CdTe solar cells by electron-beam-induced current (EBIC) and cathodoluminescence (CL) measurements.
Original language | American English |
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Pages | 389-394 |
Number of pages | 6 |
DOIs | |
State | Published - 2002 |
Event | Defect and Impurity Engineered Semiconductors and Devices III: Materials Research Society Symposium - San Francisco, California Duration: 1 Apr 2002 → 5 Apr 2002 |
Conference
Conference | Defect and Impurity Engineered Semiconductors and Devices III: Materials Research Society Symposium |
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City | San Francisco, California |
Period | 1/04/02 → 5/04/02 |
NREL Publication Number
- NREL/CP-520-31961