The Roles of Carrier Concentration and Interface, Bulk, and Grain-Boundary Recombination for 25% Efficient CdTe Solar Cells: Article No. 214506

Ana Kanevce, Matthew Reese, Teresa Barnes, Wyatt Metzger

Research output: Contribution to journalArticlepeer-review

181 Scopus Citations

Abstract

CdTe devices have reached efficiencies of 22.1% [1] due to continuing improvements in bulk material properties, including minority carrier lifetime. Device modeling has helped guide device improvements, by quantifying the impacts of improving electronic properties on device performance, and suggesting device designs to yield maximal performance. The importance of various electronic properties is interdependent. As bulk material properties improve, particularly carrier lifetime, interfaces become more critical because the carrier diffusion lengths are longer. We present device modeling analysis which describes the effects of recombination at the interfaces and grain boundaries as lifetime and doping of the CdTe layer changes. The doping and lifetime are, and should be, priorities to open-circuit voltage (Voc ) and efficiency improvements. However, upon their improvement, interface and grain boundary (GB) recombination become bottlenecks to device performance. This work pinpoints and discusses the emerging obstacles to next-generation CdTe device efficiency.
Original languageAmerican English
Number of pages9
JournalJournal of Applied Physics
Volume121
Issue number21
DOIs
StatePublished - 2017

NREL Publication Number

  • NREL/JA-5K00-67610

Keywords

  • doping
  • grain boundaries
  • hole density
  • II-VI semiconductors
  • materials properties

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