The Stability of Illuminated p-GaInP2 Semiconductor Photoelectrode

Heli Wang, Todd Deutsch, Adam Welch, John A. Turner

Research output: Contribution to journalArticlepeer-review

13 Scopus Citations

Abstract

Thin p-GaInP2 films were tested 24 h in pH1 NH 4NO3 solution at AM 1.5 G, and compared to that tested in 3 M H2SO4. Optical, SEM and EDX investigations confirmed that the surface of the tested sample in pH1 NH4NO3 was kept almost as that of an as-received one, while the sample tested in 3 M H 2SO4 experienced extensive corrosion via selective dissolution of Ga. ICP analysis confirmed the very low dissolution of p-GaInP2 in pH1 NH4NO3 solution, compared to that in 3 M H2SO4. The GaInP2 sample tested in pH1 NH4NO3 solution had an XPS depth profile almost identical to that of an as-grown sample, we speculate that absorbed NH 3 on the semiconductor surface could be responsible for the observed corrosion inhibition. Thus, the p-GaInP2 should last much longer when working in pH1 NH4NO3 solution, due to this inhibiting effect. This result shows promise toward meeting US DOE's 2013 goal of 8% STH efficiency for 1000 h duration.

Original languageAmerican English
Pages (from-to)14009-14014
Number of pages6
JournalInternational Journal of Hydrogen Energy
Volume37
Issue number19
DOIs
StatePublished - Oct 2012

NREL Publication Number

  • NREL/JA-5600-54061

Keywords

  • GaInP2
  • photoelectrochemistry
  • SEM
  • stability
  • XPS

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