Theoretical and Experimental Study of Highly Textured GaAs on Silicon using a Graphene Buffer Layer

Andrew Norman, Yazeed Alaskar, Shamsul Arafin, Qiyin Lin, Darshana Wickramaratne, Jeff McKay, Zhi Zhang, Luchi Yao, Feng Ding, Jin Zoug, Mark Goorsky, Roger Lake, Mark Zurbuchen, Kang Wang

Research output: Contribution to journalArticlepeer-review

22 Scopus Citations


A novel heteroepitaxial growth technique, quasi-van der Waals epitaxy, promises the ability to deposit three-dimensional GaAs materials on silicon using two-dimensional graphene as a buffer layer by overcoming the lattice and thermal expansion mismatch. In this study, density functional theory (DFT) simulations were performed to understand the interactions at the GaAs/graphene hetero-interface as well as the growth orientations of GaAs on graphene. To develop a better understanding of the molecular beam epitaxy-grown GaAs films on graphene, samples were characterized by x-ray diffraction (θ-2θ scan, ω-scan, grazing incidence XRD and pole figure measurement) and transmission electron microscopy. The realizations of smooth GaAs films with a strong (111) oriented fiber-texture on graphene/silicon using this deposition technique are a milestone towards an eventual demonstration of the epitaxial growth of GaAs on silicon, which is necessary for integrated photonics application.

Original languageAmerican English
Pages (from-to)268-273
Number of pages6
JournalJournal of Crystal Growth
StatePublished - 2015

Bibliographical note

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

NREL Publication Number

  • NREL/JA-5K00-64920


  • A3. Molecular beam epitaxy
  • A3. Thin film
  • B2. Semiconducting gallium arsenide
  • B2. Semiconducting III-V materials
  • B2. Semiconducting silicon


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