Theoretical Investigation of the Dangling Bond Defects in Hydrogenated Amorphous Silicon (a-Si:H) by the Self-Consistent-Field X-Alpha Scattered-Wave Cluster Molecular-Orbital Method

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)97-103
    Number of pages7
    JournalJournal of Non-Crystalline Solids
    Issue number1
    StatePublished - 1988

    Bibliographical note

    Work performed by Department of Physics, Department of Materials Science and Engineering, and Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts

    NREL Publication Number

    • ACNR/JA-10526

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