Theoretical Study of Corundum as an Ideal Gate Dielectric Material for Graphene Transistors: Article No. 155406

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	84
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.84.155406
State	Published - 2011

NREL Publication Number

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title = "Theoretical Study of Corundum as an Ideal Gate Dielectric Material for Graphene Transistors: Article No. 155406",

keywords = "corundum, DDFT, graphene transistors, graphene/Al2O3, PAW",

author = "NREL",

year = "2011",

doi = "10.1103/PhysRevB.84.155406",

language = "American English",

volume = "84",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "15",

}

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T1 - Theoretical Study of Corundum as an Ideal Gate Dielectric Material for Graphene Transistors

T2 - Article No. 155406

AU - NREL, null

PY - 2011

Y1 - 2011

KW - corundum

KW - DDFT

KW - graphene transistors

KW - graphene/Al2O3

KW - PAW

U2 - 10.1103/PhysRevB.84.155406

DO - 10.1103/PhysRevB.84.155406

M3 - Article

SN - 1098-0121

VL - 84

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 15

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